Obiettivo Chalcogenide-based phase change materials (which contain at least one element from Group VI in the periodic table: Te, Se,or S) have recently generated strong attention for electronic memory applications, due to their success as optical storage media. Phase-change memories (PCM) are one of the most promising candidates for next-generation non-volatile memories, having the potential to improve the performance compared to Flash memories as well as to be scalable beyond Flash technology.One technological issue is the phase-change layer deposition process, which principally determines the implementation of the material properties. Phase-change films are currently grown by sputtering, a physical vapour deposition technique, which has yielded demonstrator chips. However, for continued down-scaling for high-density nanoelectronic devices and lower programming currents, greater control of film deposition over non-planar structures is than possible with sputtering is necessary. Despite this need, no other deposition routes are available nor widely studied.Overall ObjectivesThe project therefore aims at the development of a film manufacturing process based on a chemical-based technique, metal-organic chemical vapour deposition (MOCVD). MOCVD enables the production of thin films with superior quality compared to those obtained by sputtering, especially in terms of conformality, coverage, and stoichiometry control, and allows implementation of phase-change films in nanoelectronic devices. The main phase-change chalcogenide material system that will be investigated is Ge2Sb2Te5 (GST). Once a suitable process is developed, it will be used to fabricate state-of-the-art memory cells at the 90/65 nm node, and the electrical performance compared with standard devices based on sputtered GST. Doping of GST and modified compounds will also be investigated to improve device performance. Campo scientifico engineering and technologymechanical engineeringmanufacturing engineeringengineering and technologymaterials engineeringcoating and filmsengineering and technologynanotechnologynanoelectronics Programma(i) FP6-IST - Information Society Technologies: thematic priority under the specific programme "Integrating and strengthening the European research area" (2002-2006). Argomento(i) IST-2004-2.4.1 - Nanoelectronics Invito a presentare proposte Data not available Meccanismo di finanziamento STREP - Specific Targeted Research Project Coordinatore CONSIGLIO NAZIONALE DELLE RICERCHE Contributo UE Nessun dato Indirizzo Italia Mostra sulla mappa Collegamenti Sito web Opens in new window Costo totale Nessun dato Partecipanti (5) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto AIXTRON AKTIENGESELLSCHAFT Germania Contributo UE Nessun dato Indirizzo KACKERTSTRASSE 15-17 52072 AACHEN Mostra sulla mappa Costo totale Nessun dato CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS Spagna Contributo UE Nessun dato Indirizzo Calle Serrano 117 MADRID Mostra sulla mappa Collegamenti Sito web Opens in new window Costo totale Nessun dato EPICHEM LIMITED Regno Unito Contributo UE Nessun dato Indirizzo POWER ROAD - BROMBOROUGH CH62 3QF WIRRAL MERSEYSIDE Mostra sulla mappa Costo totale Nessun dato STMICROELECTRONICS SRL Italia Contributo UE Nessun dato Indirizzo VIA OLIVETTI 2 20041 AGRATE BRIANZA Mostra sulla mappa Costo totale Nessun dato VILNIAUS UNIVERSITETAS Lituania Contributo UE Nessun dato Indirizzo UNIVERSITETO G. 3 01513 VILNIUS Mostra sulla mappa Costo totale Nessun dato