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Zero Order Dimension based Industrial components Applied to teleCommunications

Zero Order Dimension based Industrial components Applied to teleCommunications

Objective

Self assembled semiconductor quantum dots (QDs) constitute a class of nanoscale materials which provide fundamental advantages compared to the currently dominating 2D quantum wells: first, the zero dimensional dots suppresses temperature effects on laser threshold and efficiency and results also in a strongly reduced back reflection sensitivity. Secondly, QDs provide new degrees of freedom regarding the monolithic combination of materials. Both features are expected to allow the fabrication of compact, coolerless and isolator free telecom laser modules, providing important cost advantages in a highly competitive international market. The 8 partners of the consortium include leading European semiconductor laser manufacturers and system providers which team up with expert SMEs and academic institutions in an integrated effort to push quantum dot materials at a manufacturable level. Although some promising features of QD lasers have already been demonstrated, there are several important material challenges to be resolved including -realization of device grade QDs on InP -nanoengineering InGaAs QD properties on GaAs and InP specifically for high speed directly modulated lasers, widely tuneable lasers and semiconductor amplifiers, with specifications clearly exceeding currently available QW based devices performance, -realization of device grade 1.55 �m emitting QDs on GaAs, -development of injection structures for 40 Gbit/s directly modulated QD lasers -exploration of new QD based concepts, based on e.g. the Pockel�s effect -detailed investigations QD device reliability according to telecom standards. At the end of the project the consortium envisages to have reached a qualitatively new level of control in the fabrication of self assembled semiconductor nanostructures. The industrial partners of the project see this as a decisive step for a wide commercial exploitation of QD lasers which will greatly enhance their competitiveness.
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Coordinator

ALCATEL THALES III V LAB

Address

France

Activity type

Other

EU Contribution

€ 1 292 137

Administrative Contact

Carmen Gonzalez (Dr)

Participants (9)

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ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE

Switzerland

EU Contribution

€ 420 870

NANOPLUS NANOSYSTEMS AND TECHNOLOGIES GMBH

Germany

EU Contribution

€ 740 500

INNOLUME GMBH

Germany

EU Contribution

€ 615 000

JULIUS-MAXIMILIANS UNIVERSITAET WUERZBURG

Germany

EU Contribution

€ 343 000

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE

France

EU Contribution

€ 550 000

UNIVERSITY COLLEGE CORK - NATIONAL UNIVERSITY OF IRELAND, CORK

Ireland

EU Contribution

€ 110 000

POLITECHNIKA WROCLAWSKA

Poland

EU Contribution

€ 221 322

INSTITUTION FOR RESEARCH AND EDUCATION SAINT-PETERSBURG PHYSICO-TECHNICAL CENTRE FOR RESEARCH AND EDUCATION OF THE RUSSIAN ACADEMY OF SCIENCES

Russia

EU Contribution

€ 120 152

BOOKHAM TECHNOLOGY PLC

United Kingdom

EU Contribution

€ 579 350

Project information

Grant agreement ID: 017140

Status

Closed project

  • Start date

    1 May 2005

  • End date

    30 April 2008

Funded under:

FP6-IST

  • Overall budget:

    € 8 450 585

  • EU contribution

    € 4 992 331

Coordinated by:

ALCATEL THALES III V LAB

France