Obiettivo Technology-computer-aided design (TCAD) is an indispensable tool for development and optimization of new generations of electronic devices in industrial environments. It was estimated in the International Technology Roadmap for Semiconductors that TCAD reduces technology development costs by 35% with a tendency to rise. However, to continue to be that useful for the 32 nm technology node and beyond, the capabilities of TCAD have to follow the paradigm shifts to processes and materials considered for such nanodevices.The objective of this project is to extend the capabilities of TCAD to the materials and doping processes used at the 32 nm node and beyond. In particular, quantitative models for the deactivation and activation mechanisms for dopants in silicon will be developed which are suited for the low ion implantation energies and low-temperature or millisecond-annealing strategies of future nanodevices. These models will be able to predict the effects of point-defect engineering and, for boron, the influence of fluorine. For strained and unstrained silicon-germanium alloys, strained silicon, and silicon-on-insulator materials, models will be developed for the evolution of extended defects and for the activation, segregation, and diffusion of dopants. Special test structures will also be used to investigate a possible diffusion anisotropy in isolated semiconductor layers. The models developed will be implemented and integrated into FLOOPS-ISE to be of immediate value to the semiconductor industry and validated with respect to their needs.To reach these ambitious goals, the consortium consists of companies active in complementary fields of competence (STM-France: device manufacturing, Mattson: equipment production, Synopsys: TCAD software, CSMA: characterization) in addition to three leading European research institutes (Fraunhofer-IISB, Univ. Surrey, CNRS-LAAS/CEMES) with extensive experience in modeling and simulation. Campo scientifico natural sciencescomputer and information sciencessoftwarenatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistryhalogensnatural scienceschemical sciencesinorganic chemistrymetalloids Programma(i) FP6-IST - Information Society Technologies: thematic priority under the specific programme "Integrating and strengthening the European research area" (2002-2006). Argomento(i) IST-2004-2.4.1 - Nanoelectronics Invito a presentare proposte Data not available Meccanismo di finanziamento STREP - Specific Targeted Research Project Coordinatore FRAUNHOFER IAF Contributo UE Nessun dato Indirizzo Tullastr. 72 79108 MÜNCHEN Germania Mostra sulla mappa Collegamenti Sito web Opens in new window Costo totale Nessun dato Partecipanti (6) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE Francia Contributo UE Nessun dato Indirizzo 3, RUE MICHEL-ANGE PARIS CEDEX 16 Mostra sulla mappa Costo totale Nessun dato CSMA LIMITED Regno Unito Contributo UE Nessun dato Indirizzo QUEENS ROAD, PENKHULL ST4 7LQ STOKE ON TRENT Mostra sulla mappa Costo totale Nessun dato MATTSON THERMAL PRODUCTS GMBH Germania Contributo UE Nessun dato Indirizzo DAIMLER STRASSE 10 89260 DORNSTADT Mostra sulla mappa Costo totale Nessun dato STMICROELECTRONICS SA Francia Contributo UE Nessun dato Indirizzo 29 BOULEVARD ROMAIN ROLLAND 92120 MONTROUGE Mostra sulla mappa Costo totale Nessun dato SYNOPSYS SWITZERLAND LLC Svizzera Contributo UE Nessun dato Indirizzo AFFOLTERNSTRASSE 52 8050 ZUERICH Mostra sulla mappa Costo totale Nessun dato THE UNIVERSITY OF NEWCASTLE UPON TYNE Regno Unito Contributo UE Nessun dato Indirizzo 6 KENSINGTON TERRACE NE1 7RU NEWCASTLE UPON TYNE Mostra sulla mappa Costo totale Nessun dato
