Project description Nanoelectronics Show the project objective Hide the project objective The radio-frequency devices have been so far built exclusively on bulk materials (GaAs, InP, SiC ). However, new applications are requesting higher performances (operating voltage, maximum power or operating temperature) from those devices and substrates materials appear to become one of the major limiting factors.GaN is foreseen as the material of choice for High Power Radio Frequency High Electron Mobility Transistor (HEMT). But single crystal GaN epitaxial layers can only be grown on SiC or GaN substrates (both being expensive and limited in size and quantity). More recently Sapphire and bulk Silicon have been used as substrates for GaN HEMT, but suffered from low thermal conductivity. The objective of this project is to prove the adequacy of a new type of composite substrate, able to provide a cost efficient solution that will leverage the use of advanced high power devices in wireless communication systems. The proposed innovative approach is based on thin single crystal "seed layer" transferred on top of a thick semi-insulating polycrystalline material tailored for thermal dissipation . This project aims to investigate and optimize two different substrates capable of supporting GaN HEMT devices :SiC on polycrystalline SiC : the high quality single crystal SiC acts as the seed layer, on top of an inexpensive high thermal conductivity layer, the polycrystalline SiC. This substrate will significantly improve the cost of GaN HEMT structure grown on it. Si on polycrystalline SiC : The silicon as seed layer will provide large diameter substrate for manufacturing of GaN HEMT (4 or 6 inches) and the polycrystalline SiC will significantly improve the thermal conductivity as opposed to bulk silicon. This can be dedicated to large volume applications.The Hyphen projects will develop and characterize the complete technology chain, from susbtrate to discrete devices. Fields of science engineering and technologyelectrical engineering, electronic engineering, information engineeringinformation engineeringtelecommunicationsradio technologyradio frequencynatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP6-IST - Information Society Technologies: thematic priority under the specific programme "Integrating and strengthening the European research area" (2002-2006). Topic(s) IST-2004-2.4.1 - Nanoelectronics Call for proposal FP6-2004-IST-4 See other projects for this call Funding Scheme STREP - Specific Targeted Research Project Coordinator PICOGIGA INTERNATIONAL EU contribution € 796 296,00 Address Place Marcel Rebuffat Parc de Villejust 91971 Courtaboeuf 7 France See on map Activity type Other Links Website Opens in new window Total cost No data Participants (8) Sort alphabetically Sort by EU Contribution Expand all Collapse all UNITED MONOLITHICS SEMICONDUCTORS GMBH Germany EU contribution € 163 349,00 Address WILHELM-RUNGE-STRASSE 89081 ULM See on map Activity type Other Total cost No data CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE France EU contribution € 143 336,00 Address 3, RUE MICHEL-ANGE 75794 PARIS CEDEX 16 See on map Total cost No data III V LAB France EU contribution € 350 084,00 Address ROUTE DE NOZAY 91460 MARCOUSSIS See on map Activity type Other Total cost No data MAGYAR TUDOMANYOS AKADEMIA - MUSZAKI FIZIKAI ES ANYAGTUDOMANYI KUTATOINTEZET Hungary EU contribution € 158 147,00 Address KONKOLY THEGE UT 29-33 1121 BUDAPEST See on map Activity type Research Organisations Total cost No data UNIVERSITA DEGLI STUDI DI PADOVA Italy EU contribution € 249 442,00 Address VIA VIII FEBBRAIO 2 35122 PADOVA (PD) See on map Activity type Higher or Secondary Education Establishments Total cost No data INSTYTUT TECHNOLOGII ELEKTRONOWEJ Poland EU contribution € 194 813,00 Address AL. LOTNIKOW 32/46 02-668 WARSZAWA See on map Total cost No data NORSTEL AB Sweden EU contribution € 291 175,00 Address - 17824 EKERO See on map Activity type Other Total cost No data UNIVERSITE DES SCIENCES ET TECHNOLOGIES DE LILLE - LILLE I France EU contribution € 0,00 Address BATIMENT A3 CITE SCIENTIFIQUE 59655 VILLENEUVE D'ASCQ See on map Activity type Higher or Secondary Education Establishments Total cost No data
