Objectif Passive systems such as inductors, capacitors and transformers, integrated on-chip, are essential building blocks of all analogue RFICs and their performance at current and future CMOS processes is a major bottleneck to successful system integration at the single-chip level radios at high frequencies. Further, this bottleneck prevents a larger-scale integration of more complicated analogue stages essential for wireless communication chips, most notably of filters, which currently remain off-chip. Part of the problem relates to physical properties of standard CMOS processes, i.e. metal and substrate losses and couplings. Another part is the inadequacy of lumped-element design rules for correctly accounting for fully electromagnetic physical effects at high frequencies.Finally, absence of multi-disciplinary research linking the above physical and RF design problems to a synthesis cycle of CMOS-compatible material processes with optimised high-frequency material properties, possibly including composite electromagnetic materials and photonic crystals. This proposal will contribute to remedying these deficiencies in a technologically relevant way, by: First, using novel material Si processes, such as porous Si patterned with high-K or alumina dielectrics, to analyse and optimise the full-wave electromagnetic design of on-chip high-Q passives. It will then use these optimised cells to derive a comprehensive design methodology for on-chip pass-band filters, including accurate broadband circuit models, where the remaining technology process loss will be mapped to the appropriate circuit sub-topologies. Lastly, these losses will be cancelled by the insertion of appropriately optimised FET interconnections of minimum noise figure, to complete a realistic on-chip filter design cycle directly implementable to the semiconductor industry. Champ scientifique engineering and technologynanotechnologynatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural sciencesphysical scienceselectromagnetism and electronicsmicroelectronics Programme(s) FP6-MOBILITY - Human resources and Mobility in the specific programme for research, technological development and demonstration "Structuring the European Research Area" under the Sixth Framework Programme 2002-2006 Thème(s) MOBILITY-4.2 - Marie Curie International Reintegration Grants (IRG) Appel à propositions FP6-2002-MOBILITY-12 Voir d’autres projets de cet appel Régime de financement IRG - Marie Curie actions-International re-integration grants Coordinateur NATIONAL CENTER FOR SCIENTIFIC RESEARCH "DEMOKRITOS",INSTITUTE OF MICROELECTRONICS Contribution de l’UE Aucune donnée Adresse Terma Patriarhou Gregoriou Str. AGHIA PARASKEVI - ATHENS Grèce Voir sur la carte Liens Site web Opens in new window Coût total Aucune donnée
