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Interfacial Phenomena at Atomic Resolution and Multiscale Properties of Novel III-V Semiconductors

Interfacial Phenomena at Atomic Resolution and Multiscale Properties of Novel III-V Semiconductors

Objective

The ultimate goal of this project is to provide a profound knowledge on III-V semiconductor heterostructures-nanostructures. The project will lead to extensive comprehension of growth mechanisms, microstructures and interfacial phenomena, as well as of the interrelation of structural and physical properties in order to control the atomic level the synthesis, the growth, processing and properties of novel III-V semiconductors such as III-nitrideternary and quaternary alloys, InN, and â-dilute nitrideâ- alloys. Such materials are extremely promising for the realization of devices for optoelectronic applications in UV to near IR wavelengths (e.g. light emittingdiodes, laser diodes, UV detectors), and high temperature, high frequency and power electronics like highelectron mobility transistors.

In particular, quantum confinement of carriers in quantum wells and dots is anticipated to yield high performance for example by increasing the radiation efficiency of optoelectronic devices. The collaboration in this network of leading European experts in fields ranging from reactor design to electronic properties will revolutionize research in the field. An important objective is a contribution to the advancement and defragmentation of competitive European research in materials science and technology for device applications.

The consortium combines the innovative multi-scale theoretical analysis of structures and properties with experimental characterisation by a unique collection of state-of-the-art techniques. The most important outcome from this multidisciplinary research effort is that a number of young researchers will be trained under expert supervision. Through mobility among the partners and a series of activities such as workshops and e-learning, they will become capable to employ a unique combination of growth, experimental characterization and theoretical modelling techniques.

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Coordinator

ARISTOTLE UNIVERSITY OF THESSALONIKI

Address

Administration Building, University Campus
Thessaloniki

Greece

Administrative Contact

Philomela KOMNINOU (Professor)

Participants (14)

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CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)

France

ECOLE NATIONALE SUPERIEURE D'INGENIEURS DE CAEN ET CENTRE DE RECHERCHE

France

FORSCHUNGSVERBUND BERLIN E.V

Germany

FOUNDATION FOR RESEARCH AND TECHNOLOGY - HELLAS

Greece

FRIEDRICH-ALEXANDER-UNIVERSITAAT ERLANGEN-NARNBERG

Germany

HUMBOLDT-UNIVERSITAT ZU BERLIN

Germany

INFINEON TECHNOLOGIES AG

Germany

INSTYTUT PODSTAWOWYCH PROBLEMOW TECHNIKI POLSKA AKADEMIA NAUK

Poland

QIMONDA DRESDEN GMBH & CO.OHG

Germany

THE CHANCELLOR, MASTERS AND SCHOLARS OF THE UNIVERSITY OF CAMBRIDGE

United Kingdom

THOMAS SWAN SCIENTIFIC EQUIPMENT LIMITED

United Kingdom

UNIVERSITAAT PADERBORN

Germany

UNIVERSITE BLAISE PASCAL CLERMONT-FERRAND II

France

UNIVERSITY OF LIVERPOOL

United Kingdom

Project information

Grant agreement ID: 5583

  • Start date

    1 March 2005

  • End date

    28 February 2009

Funded under:

FP6-MOBILITY

Coordinated by:

ARISTOTLE UNIVERSITY OF THESSALONIKI

Greece