Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC on hexagonal substrates
UNIVERSITE CLAUDE BERNARD LYON 1
43, Boulevard Du 11 Novembre 1918
AGENCIA ESTATAL CONSEJO SUPERIOR DE INVESTIGACIONES CIENTIFICAS
ARISTOTELIO PANEPISTIMIO THESSALONIKIS
CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE (CNRS)
CONSIGLIO NAZIONALE DELLE RICERCHE
EZUS LYON 1 SA
FRIEDRICH-ALEXANDER UNIVERSITAET ERLANGEN-NUERNBERG
INSTITUT NATIONAL POLYTECHNIQUE DE GRENOBLE
LYON INGÉNIERIE PROJETS
Final Activity Report Summary - MANSIC (Promoting and structuring a Multidisciplinary Academic-Industrial Network through the heteropolytype growth, characterisation and applications of 3C-SiC ...)
The repeated experimental works allowed demonstrating for the first time a 3C-SiC crystal of sufficient size for handling and thus electronic testing. Record value of low crystalline defect density was obtained in this way. The 3C crystals could be grown very pure or intentionally "doped" with selected impurity in order to tune the electronic properties. The incorporation and electrical activity of these impurities were studied in details using both optical and electrical characterisation techniques. Using the 3C-SiC material grown by the consortium, several evaluation and characterisation tests were perform in order to estimate its performances in electronic devices. It was shown that this 3C-SiC material still contains some crystalline defects which are degrading the performances of the devices, for example by increasing the leakage current, reducing the efficiency of the electric contacts or reducing the maximum breakdown voltage achievable. On the other hand, the interface with insulating layer (silica) was found extremely good, close to the standard of Silicon technology. This latter point is very encouraging since it allow considering a 3C-SiC Metal-Oxide-Semiconductor (MOS) device with better electronic performances than the ones made with 4H-SiC polytype.
As a conclusion, MANSiC network allowed increasing the basic knowledge on 3C-SiC polytype for electronic applications. It was possible thanks to the fundamental research performed in the laboratories of the consortium and also thanks to the gathering of multiple fields of expertise brought by each partner. The active participation of the recruited young researchers helped also reaching the goals faster.
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