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New materials with Ultra high k dielectric constant fOr TOmorrow wireless electronics

New materials with Ultra high k dielectric constant fOr TOmorrow wireless electronics

Objective

Recently, a new ceramic material, i.e. calcium copper titanate, CaCu3Ti4O12, (CCTO) showed a radically new property, i.e. an impressive dielectric constant k=105 at 1 MHz, which is nearly constant over a wide temperature range (100-400K). We propose to fabricate high capacity density condensers (>500 nF/mm2) for development of a new integrated electronics. It has a huge economic impact (the potential market is billions US$). Many attempts beyond the state of the art are proposed.

A nanodescription of the material will be achieved by developing nanocharacterization for a knowledge-based activity oriented to material improvement. Pure CCTO bulk properties will be firstly optimized by strongly reducing impurities and anomalies, and then they will be improved beyond the state of the art investigating doped CCTO. We expected that a certain kind of phase composite Ca1+xCu3-xTi4O12 (x=0-3) could decrease the dissipation factor.

This activity will produce targets of pure CCTO (first) and then doped CCTO for physic al deposition such as laser ablation and sputtering that will be further developed during the project by using novel approaches based on multicomponent deposition. Metal organic chemical vapour deposition development activity guarantees the required high step coverage for use in 3D structures. As a breakthrough, new equipment will be developed within the project for laser assisted Chemical Beam Epitaxy (CBE), which uses a laser to change in situ during the deposition the CCTO composition.

The advantage of this approach is the easily scalability to large surfaces for industrial processes. A specific silicon processing (high temperature resistant metal gates, etching,...) will be developed to integrate CCTO deposition in the silicon technology and produce high density planar (2D) capacitive condensers (>500 nF/mm2) working up to 4 GHz. The implementation of 3D structures will allow achieving results that are even more ambitious.

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Coordinator

CONSIGLIO NAZIONALE DELLE RICERCHE

Address

Piazzale Aldo Moro 7
Roma

Italy

Administrative Contact

Vito RAINERI (Dr)

Participants (7)

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UNIVERSITAET AUGSBURG.

Germany

UNIVERSITE FRANCOIS RABELAIS DE TOURS

France

STMICROELECTRONICS SRL

Italy

THE UNIVERSITY OF SHEFFIELD

United Kingdom

CONSORZIO INTERUNIVERSITARIO NAZIONALE PER LA SCIENZA E TECNOLOGIA DEI MATERIALI

Italy

ABCD TECHNOLOGY SARL

Switzerland

ECOLE POLYTECHNIQUE FÉDÉRALE DE LAUSANNE

Switzerland

Project information

Grant agreement ID: 32644

  • Start date

    1 November 2006

  • End date

    31 October 2009

Funded under:

FP6-NMP

  • Overall budget:

    € 2 677 920

  • EU contribution

    € 2 100 000

Coordinated by:

CONSIGLIO NAZIONALE DELLE RICERCHE

Italy