Objective The work covered by the DRYDEL project aimed to develop a deep-UV sensitive photoresist and the associated processing, with the objective of extending the DESIRE (Diffusion-Enhanced Silylating Resist) process down to the 0.3 micron range. The DESIRE process is a single-layer resist system based on surface imaging resulting from selective silylation and anisotropic dry development.The work covered by the dry develop optical lithography (DRYDEL) project aimed to develop a deep ultraviolet (UV) sensitive photoresist and the associated processing, with the objective of extending the diffusion enhanced silylating resist (DESIRE) process down to the 0.3 micron range. The DESIRE process is a single layer resist system based on surface imaging resulting from selective silylation and and anisotropic dry development. The work was distributed over 4 work packages. In the first, the resist materials were developed. Variations of the various components of the resist (photoactive compound, resin composition and solvents) have been investigated. This has led to an optimization of the i-line version of the resist (for exposure at 365 nm) and to the fabrication of first samples of the deep UV version (for exposure at 248 nm).In the second work package resist processing, such as silylation, dry development and pattern transfer, has been studied. Besides an optimization of each processing step, some more fundamental studies were carried out on silylation kinetics and swelling behaviour. Several new pieces of equipment were evaluated for silylation and dry development (including magnetically enhanced reactors and electron cyclotron resonance (ECR). Using the optimized resist materials and processes, lithographic resolution down to 0.25 micron (lines/spaces) has been demonstrated with perfect line width control over highly reflective topography (on deep-UV stepper, lambda = 248 nm, numerical operture (NA) = 0.42). The process was demonstrated in the third work package. A final work package showed the feasibility of the DESIRE process for application in gallium arsenide processing. The lift off capabilities of the process were demonstrated by the fabrication of appropriate test circuits. Fields of science natural sciencesphysical sciencestheoretical physicsparticle physicsparticle acceleratornatural sciencesphysical sciencesastronomyplanetary sciencesplanetary geologynatural scienceschemical sciencesinorganic chemistrypost-transition metals Programme(s) FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992 Topic(s) Data not available Call for proposal Data not available Funding Scheme Data not available Coordinator Interuniversitair Mikroelektronica Centrum EU contribution No data Address Kapeldreef 75 3030 Heverlee Belgium See on map Total cost No data Participants (6) Sort alphabetically Sort by EU Contribution Expand all Collapse all Commissariat à l'Energie Atomique (CEA) France EU contribution No data Address Centre d'Études de Grenoble 17 avenue des Martyrs 38041 Grenoble See on map Total cost No data FARRAN TECHNOLOGY Ireland EU contribution No data Address BALLINCOLLIG CORK See on map Total cost No data GEC Plessey Semiconductors plc United Kingdom EU contribution No data Address Caswell NN12 8EQ Towcester See on map Total cost No data NEDERLANDSE PHILIPS BEDRIJVEN BV Netherlands EU contribution No data Address PROF. HOLSTLAAN, 4 5656 AA EINDHOVEN See on map Total cost No data Siemens AG Germany EU contribution No data Address Balanstraße 73 81541 München See on map Total cost No data UCB ELECTRONICS SA Belgium EU contribution No data Address AVENUE LOUISE, 326 1050 BRUXELLES See on map Total cost No data
