Objetivo The goal of this project was the development and evaluation, in an industrial environment, of two industrial prototype etchers capable of producing the new generation of Ultra Large Scale Integration (ULSI) devices.Industrial characterization of an advanced resonant etcher (ICARE) aimed at the development of a new generation of industrial etcher equipment based upon the use of one of the 2 new reactor concepts, both operating with resonant coupling: the resonant inductive plasma etching (RIPE) and the distributed electron cyclotron resonance (DECR). The main targeted characteristics of these reactors were: total independence of parameters controlling the plasma generation and those controlling its interaction with the surface to be processed, low pressure, large volume of quiescent homogenous high density plasma, no internal active electrode, capability of processing large diameter wafers and simplicity of realisation. 3 types of etching processes specific to ultra large scale integration (ULSI) technology are to be developed to support this project: trench etching for isolation, contact and via etching and fine line polysilicon etching on thin gate oxide.2 experimental reactors based on the 2 RIPE and DECR concepts have already been manufactured and evaluated.ICARE aimed to develop a new generation of industrial etcher equipment based upon the use of one of the two new reactor concepts, both operating with resonant coupling: the Resonant Inductive Plasma Etching (RIPE), and the Distributed Electron Cyclotron Resonance (DECR). The main targeted characteristics of these reactors were: - total independence of parameters controlling the plasma generation and those controlling its interaction with the surface to be processed - low pressure - large volume of quiescent homogeneous high-density plasma - no internal active electrode - capability of processing large-diameter wafers - simplicity of realisation. Three types of etching processes specific to ULSI technology are to be developed to support this project: trench etching for isolation, contact and via etching, and fine-line polysilicon etching on thin gate oxide. The project was discontinued in June 1990. Ámbito científico natural sciencesphysical sciencestheoretical physicsparticle physicsparticle accelerator Programa(s) FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992 Tema(s) Data not available Convocatoria de propuestas Data not available Régimen de financiación Data not available Coordinador ALCATEL CIT SA Aportación de la UE Sin datos Dirección 55 RUE EDGAR QUINET 92240 MALAKOFF Francia Ver en el mapa Coste total Sin datos Participantes (5) Ordenar alfabéticamente Ordenar por aportación de la UE Ampliar todo Contraer todo CENTRO NACIONAL DE MICROELECTRONICA España Aportación de la UE Sin datos Dirección SERRANO, 144 28006 MADRID Ver en el mapa Coste total Sin datos Centre National d'Études des Télécommunications (CNET) Francia Aportación de la UE Sin datos Dirección 98 chemin du Vieux Chêne 38243 Meyland Ver en el mapa Coste total Sin datos Commissariat à l'Energie Atomique (CEA) Francia Aportación de la UE Sin datos Dirección Centre d'Études de Grenoble 17 avenue des Martyrs 38041 Grenoble Ver en el mapa Coste total Sin datos NEDERLANDSE PHILIPS BEDRIJVEN BV Países Bajos Aportación de la UE Sin datos Dirección PROF. HOLSTLAAN, 4 5656 AA EINDHOVEN Ver en el mapa Coste total Sin datos UNIVERSITY OF DUBLIN Irlanda Aportación de la UE Sin datos Dirección TRINITY COLLEGE DUBLIN 2 Ver en el mapa Coste total Sin datos
