The overall objective of this project was to establish gallium arsenide digital integrated circuit technologies using the GaAs MESFET, high electron mobility transistors (HEMT/TEGFET) and heterojunction bipolar transistors (HBT) as the active circuit elements.These circuits were to be configured to enable the speed and power advantages of GaAs over silicon to be suitably demonstrated.

The project was started in competition with project number 522. At the decision point (the end of the first year), all the demonstrator milestones had been met. These were:
-fully operational 1K SRAM in MESFET technology with 3-6 ns access time and a typical power consumption of 80 mW
-19-stage TEGFET circuits with gate delays of 20ps
-19-stage heterojunction bipolar circuits with delays of 50ps.
The achievements of the consortium in fabricating all the demonstrators defined at the outset of the project was further enhanced by the fact that the MESFET demonstrator and the TEGFET demonstrator had performances equal to the current world state of theart.
In addition, complementary programmes had been set up in the areas of lithography, dry processing, the selection of suitable dielectrics, material assessment techniques and specific process technologies.
Finally, the complementary technological tasks carried out in this project have identified the main areas of work leading towards the production of digital GaAs ICs. Project numbers 843, 971 and 1128 have resulted in ESPRIT reallocating resources in a more efficient way towards the establishment of a European capability in manufacturing GaAsICs.