Obiettivo The overall objective of this project was to establish gallium arsenide digital integrated circuit technologies using the GaAs MESFET, high electron mobility transistors (HEMT/TEGFET) and heterojunction bipolar transistors (HBT) as the active circuit elements.These circuits were to be configured to enable the speed and power advantages of GaAs over silicon to be suitably demonstrated. The project was started in competition with project number 522. At the decision point (the end of the first year), all the demonstrator milestones had been met. These were: -fully operational 1K SRAM in MESFET technology with 3-6 ns access time and a typical power consumption of 80 mW -19-stage TEGFET circuits with gate delays of 20ps -19-stage heterojunction bipolar circuits with delays of 50ps. The achievements of the consortium in fabricating all the demonstrators defined at the outset of the project was further enhanced by the fact that the MESFET demonstrator and the TEGFET demonstrator had performances equal to the current world state of theart. In addition, complementary programmes had been set up in the areas of lithography, dry processing, the selection of suitable dielectrics, material assessment techniques and specific process technologies. Finally, the complementary technological tasks carried out in this project have identified the main areas of work leading towards the production of digital GaAs ICs. Project numbers 843, 971 and 1128 have resulted in ESPRIT reallocating resources in a more efficient way towards the establishment of a European capability in manufacturing GaAsICs. Campo scientifico natural scienceschemical sciencesinorganic chemistrypost-transition metalsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Programma(i) FP1-ESPRIT 1 - European programme (EEC) for research and development in information technologies (ESPRIT), 1984-1988 Argomento(i) Data not available Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore GEC Plessey Semiconductors plc Contributo UE Nessun dato Indirizzo Caswell NN12 8EQ Towcester Regno Unito Mostra sulla mappa Costo totale Nessun dato Partecipanti (3) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Laboratoire d'Électronique Philips Francia Contributo UE Nessun dato Indirizzo 22 avenue Descartes 94453 Limail-Brevannes Mostra sulla mappa Costo totale Nessun dato Siemens Nixdorf Informationssysteme AG Germania Contributo UE Nessun dato Indirizzo Otto-Hahn-Ring 6 81739 München Mostra sulla mappa Costo totale Nessun dato Thomson CSF Francia Contributo UE Nessun dato Indirizzo 38 rue Vauthier 92100 Boulogne-Billancourt Mostra sulla mappa Costo totale Nessun dato
