CORDIS

Noise-free estimation of spatial Line Edge/Width Roughness parameters

Author(s): Constantoudis V.,Gogolides E.

Permanent ID: doi:10.1117/12.822729

Thermal characterization of materials for double patterning

Author(s): Derrough S.,Pikon A.,Sourd C.,Guerin I.,Simon J.,Gaugiran S.,Cardolaccia T.,Liu Y.,Trefonas P.,Barclay G.

Permanent ID: doi:10.1016/j.mee.2009.11.117

Nanoscale roughness effects at the interface of lithography and plasma etching: Modeling of line-edge-roughness transfer during plasma etching

Author(s): Kokkoris G.,Constantoudis V.,Gogolides E.

Permanent ID: doi:10.1109/TPS.2009.2024117

Modeling of line edge roughness transfer during plasma etching

Author(s): Constantoudis V.,Kokkoris G.,Xydi P.,Patsis G.P.,Gogolides E.

Permanent ID: doi:10.1016/j.mee.2009.01.040

Detailed resist film modeling in stochastic lithography simulation for line-edge roughness quantification

Author(s): Patsis G.P.,Drygiannakis D.,Raptis I.

Permanent ID: doi:10.1016/j.mee.2009.11.122

Materials for single-etch double patterning process: Surface curing agent and thermal cure resist

Author(s): Bae Y.C.,Liu Y.,Cardolaccia T.,McDermott J.C.,Trefonas P.,Spizuoco K.,Reilly M.,Pikon A.,Joesten L.,Zhang G.G.

Permanent ID: doi:10.1117/12.814274

Exploration of linear and non-linear double exposure techniques by simulation

Author(s): Petersen J.S.,Greenway R.T.,Fuhner T.,Evanschitzky P.,Shao F.,Erdmann A.

Permanent ID: doi:10.1117/12.814411

Lithography simulation: Modeling techniques and selected applications

Author(s): Erdmann A.,Fuhner T.,Shao F.,Evanschitzky P.

Permanent ID: doi:10.1117/12.829409

Impact of CD and overlay errors on double-patterning processes

Author(s): Lapeyre C.,Barnola S.,Servin I.,Gaugiran S.,Salvetat V.,Magome N.,Hazelton A.J.,McCallum M.

Permanent ID: doi:10.1117/12.814165

A model of self-limiting residual acid diffusion for pattern doubling

Author(s): Fuhrmann J.,Fiebach A.,Uhle M.,Erdmann A.,Szmanda C.R.,Truong C.

Permanent ID: doi:10.1016/j.mee.2008.10.023

Rigorous electromagnetic field simulation of two-beam interference exposures for the exploration of double patterning and double exposure scenarios

Author(s): Erdmann A.,Evanschitzky P.,Fuhner T.,Schnattinger T.,Xu C.-B.,Szmanda C.

Permanent ID: doi:10.1117/12.772741

Rigorous diffraction simulations of topographic wafer stacks in double patterning

Author(s): Shao F.,Evanschitzky P.,Fuhner T.,Erdmann A.

Permanent ID: doi:10.1016/j.mee.2008.11.078

Simulation of shot noise effect on CD and LER of electron-beam lithography in 32 nm designs

Author(s): Patsis G.P.,Tsikrikas N.,Drygiannakis D.,Raptis I.

Permanent ID: doi:10.1016/j.mee.2009.11.014

Line edge roughness transfer during plasma etching: modeling approaches and comparison with experimental results

Author(s): Constantoudis , V.,Kokkoris , G.,Xydi , P.,Gogolides , E.,Pargon , E.,Martin , M.

Published in: HAL CCSD Proceedings of the SPIE 2009

Permanent ID: doi:10.1117/12.823608

Efficient simulation and optimization of wafer topographies in double patterning

Author(s): Shao F.,Evanschitzky P.,Fuhner T.,Erdmann A.

Permanent ID: doi:10.1117/12.814176

Acid diffusion effects between resists in freezing processes used for contact hole patterning

Author(s): Fuhrmann J.,Fiebach A.,Erdmann A.,Trefonas P.

Permanent ID: doi:10.1016/j.mee.2009.11.150

Materials for double patterning strategies: Development and application

Author(s): Perret D.,Simon J.,Gaugiran S.,Cutler C.,Cardolaccia T.,Pikon A.,Guerin I.,Lapeyre C.,Derrough S.,Szmanda C.

Permanent ID: doi:10.1016/j.mee.2009.01.051

Lithographic importance of base diffusion in chemically amplified photoresists

Author(s): Schnattinger T.,Erdmann A.

Permanent ID: doi:10.1016/j.mee.2008.11.004

Advanced lithography models for strict process control in the 32 nm technology node

Author(s): Patsis G.P.,Drygiannakis D.,Raptis I.,Gogolides E.,Erdmann A.

Permanent ID: doi:10.1016/j.mee.2009.01.050