Atomic functionalities on silicon devices
Objective
The ultimate electrical switch is an atomic point contact. It has been realized and operated several times in laboratories at low temperature under the form of Quantum Point Contacts (QPC), metallic break junctions, molecules placed in an air gap. However a silicon atomic switch has not been realized yet. The devices will be manufactured within a mature technology on state-of-the-art CMOS platforms.
Contrarily to bottom-up approaches, there is an unavoidable dispersion in the average number and location of dopants, using masking and implantation CMOS techniques. Nevertheless several approaches are now addressing this question for top-down devices, and this option will be considered. Therefore, we will study single atomic devices, either real (i.e. dopant) or artificial (i.e. quantum dots), with a manageable dispersion by considering three generic cases: devices without dopant, devices with a targeted concentration of one dopant and devices with many dopants.
Devices without dopant will be based on ultimate silicon SET. A targeted size of 10 nm is realistic, allowing operation at low temperature (but much above 4.2K). These devices are fully controlled and scalable.
Devices with one dopant or two dopants will be identified and selected from their electrical characteristics and then studied thoroughly. Relatively high operating temperatures up to room temperature are expected using donors with large ionization energy. These devices are the smallest possible switches using the silicon technology.
Because our ultimate SET present the decisive advantage of an immediate integration in the CMOS, the AFSID project will prove the validity of hybrid SET-CMOS approach by building a SET-FET hybrid device on chip.
Funding Scheme
CP - Collaborative project (generic)
Coordinator
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
Address
Rue Leblanc 25
75015 Paris 15
France
Activity type
Research Organisations
EU Contribution
€ 905 000
Administrative Contact
Carole Signoret (Mrs.)
Participants (5)
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UNIVERSITY OF MELBOURNE
Australia
EU Contribution
€ 240 000
EBERHARD KARLS UNIVERSITAET TUEBINGEN
Germany
EU Contribution
€ 270 000
CONSIGLIO NAZIONALE DELLE RICERCHE
Italy
EU Contribution
€ 270 000
TECHNISCHE UNIVERSITEIT DELFT
Netherlands
EU Contribution
€ 265 000
HITACHI EUROPE LIMITED
United Kingdom
EU Contribution
€ 250 000
Project information
AFSID
Grant agreement ID: 214989
Status
Closed project
-
Start date
1 February 2008
-
End date
31 July 2011
Funded under:
FP7-ICT
-
Overall budget:
€ 3 130 780
-
EU contribution
€ 2 200 000
Project information
AFSID
Grant agreement ID: 214989
Status
Closed project
-
Start date
1 February 2008
-
End date
31 July 2011
Funded under:
FP7-ICT
-
Overall budget:
€ 3 130 780
-
EU contribution
€ 2 200 000
Deliverables
Deliverables not available
Publications
Project information
AFSID
Grant agreement ID: 214989
Status
Closed project
-
Start date
1 February 2008
-
End date
31 July 2011
Funded under:
FP7-ICT
-
Overall budget:
€ 3 130 780
-
EU contribution
€ 2 200 000
Project information
AFSID
Grant agreement ID: 214989
Status
Closed project
-
Start date
1 February 2008
-
End date
31 July 2011
Funded under:
FP7-ICT
-
Overall budget:
€ 3 130 780
-
EU contribution
€ 2 200 000
