Obiettivo This two-year project was dedicated to the development of a basic process validated on HBTs and SSI divider (D/2 and D/4) ECL circuits and to the investigation of the specific steps of a future advanced self-aligned process. The general objective was to develop a high-performance GaAs process using GaAs-GaAlAs HBTs for ultrafast emitter coupled logic. E-beam lithography, plasma deposition and etching techniques were investigated, together with all aspects of the IC process, including material epitaxy (both MBE and MOCVD), ion implantation, rapid thermal annealing, lithography, dry etching, ohmic contacts (including refractory alloys) and dielectrics. This work was accompanied by a strong effort in modelling, concerning both 1D and 2D device numerical modelling and analytical CAD block models. The general objective was to develop a high performance gallium arsenide process using gallium arsenide/gallium aluminium arsenide heterojunction bipolar transistors (HBT) for ultrafast emitter coupled logic. Electron beam lithography, plasma deposition and etching techniques were investigated, together with all aspects of the integrated circuits (IC) process, including material epitaxy (both molecular beam epitaxy (MBE) and metal organic chemical vapour deposition (MOCVD)), ion implantation, rapid thermal annealing, lithography, dry etching, ohmic contacts (including refractory alloys) and dielectrics. This work was accompanied by a strong effort in modelling, concerning both 1-dimensional and 2-dimensional device numerical modelling and analytical computer aided design (CAD)) block models. Several approaches leading to selfalignment and micron and submicron rules were also investigated, with a very exciting successful fabrication of exploratory selfaligned HBTs. All 3 basic processes were characterised on HBTs with cutoff frequencies above 20 GHz and up to 29 GHz, and division by 2 and division by 4 circuits were demonstrated with input rates as high as 7.6 Gbits/s.The most significant achievements were a high degree of quality and uniformity of both MBE and MOCVD layers, world-record values for ptype base doping, assembling, validation and comparison of three basic technological processes using ion implantation, r apid thermal annealing (RTA), dry etching, and high-performance ntype and p-type ohmic contacts (including the nonconventional InGeAu and AuMn alloys). Several approaches leading to selfalignment and micron and submicron rules were also investigated, with a very exciting successful fabrication of exploratory selfaligned HBTs. All three basic processes were characterised on HBTs with cutoff frequencies above 20GHz and up to 29GHz, and division by two and by four circuits was demonstrated with inputrates as high as 7.6Gbits/s. Exploitation A part of the HBT technological know-how developed during this project by CNET has been transferred to an SME, Picogiga, which is customising MBE epitaxial wafers. Campo scientifico natural sciencesphysical sciencesplasma physicsnatural scienceschemical sciencesinorganic chemistrypost-transition metals Programma(i) FP1-ESPRIT 1 - European programme (EEC) for research and development in information technologies (ESPRIT), 1984-1988 Argomento(i) Data not available Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore Centre National d'Études des Télécommunications (CNET) Contributo UE Nessun dato Indirizzo 196 avenue Henri Ravera 92220 Bagneux Francia Mostra sulla mappa Costo totale Nessun dato Partecipanti (4) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto FARRAN TECHNOLOGY LTD Irlanda Contributo UE Nessun dato Indirizzo BALLINCOLLIG X CORK Mostra sulla mappa Costo totale Nessun dato GEC Plessey Semiconductors plc Regno Unito Contributo UE Nessun dato Indirizzo Caswell NN12 8EQ Towcester Mostra sulla mappa Costo totale Nessun dato GEC-Marconi Materials Technology Ltd Regno Unito Contributo UE Nessun dato Indirizzo Elstree Way WD6 1RX Borehamwood Mostra sulla mappa Costo totale Nessun dato Plasma Technology Ltd Regno Unito Contributo UE Nessun dato Indirizzo North End Yatton BS19 4AP Bristol Mostra sulla mappa Costo totale Nessun dato
