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Towards 0.5 Terahertz Silicon/Germanium Heterojunction Bipolar Technology

Towards 0.5 Terahertz Silicon/Germanium Heterojunction Bipolar Technology

Objective

DOTFIVE is a three-year IP proposal for a very ambitious project focused on advanced RTD activities necessary to move the Silicon/germanium heterojunction bipolar transistor (HBT) into the operating frequency range of 0.5 terahertz (THz) (500 gigahertz GHz) enabling the future development of communication, imaging or radar Integrated Circuits (IC) working at frequencies up to 160 GHz . For a given lithography node bipolar transistors and more recently HBT have always lead the frequency race compared to MOS devices, while offering higher power density and better analogue performances (transconductance, noise, transistor matching).The main objective of this highly qualified consortium is to establish a leadership position for the European semiconductor industry in the area of millimeter wave (mmW) by research and development work on silicon based transistor devices and circuit design capabilities and know-how. SiGe HBT is a key reliable device for applications requiring power > few mW (future MOS limitation) and enabling high density, low cost integration compared to III-V. To achieve the goal DOTFIVE unites a powerful consortium:Seven academic partners for the physics understanding of nanotransistors, simulation, modeling, and characterization (down to few k) of devices; as well as the design and characterization of demonstrator electronic blocks (Low Noise Amplifier, mixers...).Two research institutes in charge of developing novel process modules and transistor structures on silicon wafers, capable of fabricating innovative SiGe HBT concepts.Two industrial companies, capable of producing 250 GHz HBT on silicon, and willing to push their capabilities to 500 GHz by incremental structural and technological improvements utilizing some of the most advanced equipments introduced recently by the CMOS miniaturization race. Two SME capable to deliver to designers, transistor parameter extraction and RF advanced compact models for all the silicon providers above.

Coordinator

STMICROELECTRONICS SA

Address

Boulevard Romain Rolland 29
92120 Montrouge

France

Activity type

Other

EU Contribution

€ 1 635 129

Administrative Contact

Dominique THOMAS (Mr)

Participants (19)

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UNIVERSITAT LINZ

Austria

EU Contribution

€ 441 056

INTERUNIVERSITAIR MICRO-ELECTRONICA CENTRUM

Belgium

EU Contribution

€ 1 335 728

BERGISCHE UNIVERSITAET WUPPERTAL

Germany

EU Contribution

€ 449 730

UNIVERSITAET SIEGEN

Germany

EU Contribution

€ 91 110

TECHNISCHE UNIVERSITAET DRESDEN

Germany

EU Contribution

€ 786 509

GWT-TUD GMBH

Germany

EU Contribution

€ 48 711

IHP GMBH - INNOVATIONS FOR HIGH PERFORMANCE MICROELECTRONICS/LEIBNIZ-INSTITUT FUER INNOVATIVE MIKROELEKTRONIK

Germany

EU Contribution

€ 1 296 699

INFINEON TECHNOLOGIES AG

Germany

EU Contribution

€ 1 595 322

UNIVERSITAET DER BUNDESWEHR MUENCHEN

Germany

EU Contribution

€ 228 000

XMOD TECHNOLOGIES

France

EU Contribution

€ 351 195

STMICROELECTRONICS CROLLES 2 SAS

France

EU Contribution

€ 47 995

UNIVERSITE PARIS-SUD

France

EU Contribution

€ 266 992

AYMING

France

EU Contribution

€ 263 000

ECOLE NATIONALE SUPERIEURE D'ELECTRONIQUE, INFORMATIQUE ET RADIOCOMMUNICATIONS DE BORDEAUX

France

EU Contribution

€ 571 705

INSTITUT POLYTECHNIQUE DE BORDEAUX

France

UNIVERSITA DEGLI STUDI DI NAPOLI FEDERICO II

Italy

EU Contribution

€ 291 088

ECOLE NATIONALE SUPERIEURE DE CHIMIE ET DE PHYSIQUE DE BORDEAUX

France

IMS bordeaux

France

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

France

Project information

Grant agreement ID: 216110

Status

Closed project

  • Start date

    1 February 2008

  • End date

    31 July 2011

Funded under:

FP7-ICT

  • Overall budget:

    € 14 740 480

  • EU contribution

    € 9 699 969

Coordinated by:

STMICROELECTRONICS SA

France