Objective The SUBSOITEC project aimed to develop high-performance SOI (Silicon On Insulator)/CMOS technologies for future VLSI circuits, which, while competitive with standard bulk CMOS processes, are compatible with them and offer the inherent advantages of SOI technologies.The SUBSOITEC project aimed to develop high-performance silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) technologies for future very large scale integration (VLSI) circuits, which, while competitive with standard bulk CMOS processes, are compatible with them and offer the inherent advantages of SOI technologies. The project evaluated a complete SOI/CMOS process with 0.7 micron design rules. The programme included development work on silicon implanted oxide (SIMOX) SOI substrates, on the 0.7 micron SOI technology, on device and physics modelling, on design, and on the test and characterization of complex VLSI demonstrators. The work performed in the area of materials fabrication and device evaluation yielded excellent results that compare favourably to work done outside this project. The SOI substrates are among the best available world wide, even for substrates with very thin top silicon thicknesses. The compatibility of SOI processes with standard bulk CMOS technology was considered as a major goal. The portability of bulk design to SOI was studied and implemented. The main difficulties (such as electrostatic discharge (ESD) protection devices and the absence of substrate contacts) are now solved. The ability to realize complex VLSI circuits on SOI with 0.7 micron design rules will be demonstrated, and evaluation of the industrial aspect will be achieved in a comparison of a design in a CMOS SOI with a CMOS bulk process with the same design rules, and by several SOI demonstrators including a 64 k static random access memory (SRAM) and 2 custom chips.CMOS circuits with deep sub-micron geometries require very complex and expensive processes on bulk silicon. An acceptable challenger to bulk Si is SOI material which allows, in principle, a significant reduction of the number of process steps leading to an enhancement of the yield of complex VLSI chips and a reduction in cost. Two other advantages of CMOS on SOI are the reduction of parasitic capacitance (which increases circuit speed), and immunity towards radiation and heavy ion effects (needed for space applications), making this technology competitive with bulk BICMOS technology. Fields of science natural scienceschemical sciencesinorganic chemistryinorganic compoundsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural sciencesmathematicspure mathematicsgeometrynatural scienceschemical sciencesinorganic chemistrymetalloids Programme(s) FP2-ESPRIT 2 - European strategic programme (EEC) for research and development in information technologies (ESPRIT), 1987-1992 Topic(s) Data not available Call for proposal Data not available Funding Scheme Data not available Coordinator THOMSON CSF SEMICONDUCTEURS SPECIFIQUES EU contribution No data Address 3300 RUE JEAN-PIERRE TIMBAUD 92402 Courbevoie France See on map Total cost No data Participants (9) Sort alphabetically Sort by EU Contribution Expand all Collapse all CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE France EU contribution No data Address Avenue des Martyrs 25 38042 Grenoble See on map Total cost No data Commissariat à l'Energie Atomique (CEA) France EU contribution No data Address Centre d'Études de Grenoble 17 avenue des Martyrs 38041 Grenoble See on map Total cost No data Deutsche Aerospace AG Germany EU contribution No data Address Sedanstraße 10 89077 Ulm See on map Total cost No data FRAUNHOFER INSTITUT FÜR SILICATFORSCHUNG Germany EU contribution No data Address ARTILLERIESTRAßE 12 91052 ERLANGEN See on map Total cost No data GEC Marconi Electronic Devices Ltd United Kingdom EU contribution No data Address Lincoln Industrial Park Doddington Road LN6 3LF Lincoln See on map Total cost No data NATIONAL MICROELECTRONICS RESEARCH CENTRE Ireland EU contribution No data Address PROSPECT ROW CORK See on map Total cost No data SEXTANT AVIONIQUE SA France EU contribution No data Address 59 AERODROME DE VILLACOUBLAY 78141 VELIZY-VILLACOUBLAY See on map Total cost No data SGS THOMSON MICROELECTRONICS SA France EU contribution No data Address 7 AVENUE GALLIENI 92253 GENTILLY See on map Total cost No data University of Sheffield United Kingdom EU contribution No data Address Western Bank S10 2TN Sheffield See on map Total cost No data