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Advanced GaN packaging

Advanced GaN packaging

Objective

On the very last months, the Gallium Nitride (GaN) technology has made a remarked breakthrough in the world of the microwave electronics with the announcement of commercially available transistors from 5W to 180W at microwave frequencies. Coming from major transistor industrial vendors from Japon but also from US, it let equipment manufacturers and especially the one from space think that time has come now for a rapid insertion into their systems. Outside the reliability and the European source concerns, these GaN power transistors will roughly increase power density by more than an order of magnitude for large devices (from 0.5 W/mm to 5 W/mm for space applications including deratings). The consequence will then directly impact the packaging technology for which the thermal resistance needs to be importantly reduced if the advantages obtained at die level want to remain at its highest at module and equipment level. To address this critical item for space satellite applications is the aim of the proposed project which is in the ESA roadmap [Ref. ESTEC/AC/418-20, ESA-IPC 2006] for GaN component strategy but not funded by ESA. The ESA funding is being mainly dedicated toward GaN transistor process optimization, reliability and industrialization. In this project, AGAPAC, which stands for “Advanced GaN Packaging”, we want to establish a space compatible European supply chain for packaging solution of GaN HEMTs and GaN MMICs by 2010. To realize this project objective, we have defined sub-objectives which directly relate to 7 workpackages targeting: This project will extend beyond state of the art for high thermal dissipation composite (up to 600 W/mK) either based onto diamond or carbon nano-fiber compatible with hybride micropackage manufacturing technologies. The challenge remains in developing a space compatible power micropackage able to withstand up to 100 W of dissipated power when standard same size micropackage are around 25 W.

Coordinator

THALES ALENIA SPACE FRANCE

Address

Avenue Jean Francois Champollion 26
31100 Toulouse

France

Activity type

Other

EU Contribution

€ 362 554

Administrative Contact

Olivier Vendier (Mr.)

Participants (6)

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EGIDE SA

France

EU Contribution

€ 204 400

PLANSEE SE

Austria

EU Contribution

€ 249 578

UNITED MONOLITHIC SEMICONDUCTORS GMBH

Germany

EU Contribution

€ 183 751

FUNDACION TECNALIA RESEARCH & INNOVATION

Spain

EU Contribution

€ 275 640,25

CENTRE NATIONAL D'ETUDES SPATIALES - CNES

France

EU Contribution

€ 212 704,75

UNIVERSITY OF BRISTOL

United Kingdom

EU Contribution

€ 276 000

Project information

Grant agreement ID: 218851

Status

Closed project

  • Start date

    1 October 2008

  • End date

    31 March 2012

Funded under:

FP7-SPACE

  • Overall budget:

    € 2 848 830,25

  • EU contribution

    € 1 764 628

Coordinated by:

THALES ALENIA SPACE FRANCE

France

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