Obiettivo Ferroelectric compounds such as the lead zirconate titanates (PbZrxTi1-xO3, or PZT) exhibit a range of physical properties of interest for different applications. In particular, they are characterised by a permanent, electrically switchable dielectric polarisation, which makes ferroelectric capacitors suitable for binary, non-volatile data storage. The objective of FELMAS is to demonstrate the feasibility of making high-quality PZT films of sufficient quality for non-volatile memory devices and to integrate them with existing CMOS technologies. The development of a ferroelectric technology has been largely completed. Capacitors with a film thickness between 0.1 and 0.4 um have been deposited on 10 cm oxidized silicon wafers. They can be switched for more than 1010 cycles at 5 V and for more than 1015 cycles at 1.5 V. This is very promising for low voltage (battery operated) applications. On the process development side, it has been shown that the structuring of the capacitors can be successfully done by dry etching techniques such as reactive ion etching. This enables production of high density memories and enhances the compatibility with silicon integrated circuit (IC) processes. Considerable effort has been expended on the design of a test structure evaluation module (TSEM) containing a number of complementary metal oxide semiconductor (CMOS) and ferroelectric test structures, sensor structures, different memory cells and a small (256 bit) memory. The design is now complete.Specific aims are to: - develop and optimise thin-film PZT deposition on silicon substrates (10-15 cm in diameter) using two different methods (sol-gel spin coating form metal-organic solutions and metal-organic chemical vapour deposition) - optimise the influence of composition, dopant type and concentration, processing conditions and microstructure on the switching properties of PZT films - optimise standard Ti/Pt electrodes and develop electrodes with improved switching properties - develop models for the switching, fatigue and retention behaviour of ferroelectric thin films - develop viable processing techniques compatible with IC technologies - design, process and evaluate test structure evaluation modules (TSEMs) to demonstrate the compatibility of ferroelectric and CMOS technologies, using 1.5 micron technology and including a memory device. - perform a preliminary evaluation of the industrialisation potential and limitations of the ferroelectric technology - evaluate deposited ferroelectric films for sensor applications. Campo scientifico natural scienceschemical sciencesinorganic chemistryinorganic compoundsengineering and technologymaterials engineeringcoating and filmsengineering and technologyelectrical engineering, electronic engineering, information engineeringelectronic engineeringsensorsnatural sciencesphysical scienceselectromagnetism and electronicssemiconductivitynatural scienceschemical sciencesinorganic chemistrymetalloids Programma(i) FP3-ESPRIT 3 - Specific research and technological development programme (EEC) in the field of information technologies, 1990-1994 Argomento(i) Data not available Invito a presentare proposte Data not available Meccanismo di finanziamento Data not available Coordinatore NEDERLANDSE PHILIPS BEDRIJVEN BV Contributo UE Nessun dato Indirizzo Kastanjelaan, 1218 5600 MD Eindhoven Paesi Bassi Mostra sulla mappa Costo totale Nessun dato Partecipanti (6) Classifica in ordine alfabetico Classifica per Contributo UE Espandi tutto Riduci tutto Commissariat à l'Energie Atomique (CEA) Francia Contributo UE Nessun dato Indirizzo Centre d'études de grenoble 17 avenue des martyrs 38041 Grenoble Mostra sulla mappa Costo totale Nessun dato ECOLE POLYTECHNIQUE DE LAUSANNE Svizzera Contributo UE Nessun dato Indirizzo Inf- ecublens 1015 Lausanne Mostra sulla mappa Costo totale Nessun dato GEC Marconi Electronic Devices Ltd Regno Unito Contributo UE Nessun dato Indirizzo Lincoln industrial park doddington road LN6 3LF Lincoln Mostra sulla mappa Costo totale Nessun dato Interuniversitair Mikroelektronica Centrum Belgio Contributo UE Nessun dato Indirizzo Kapeldreef 75 3030 Heverlee Mostra sulla mappa Costo totale Nessun dato THOMSON CSF Francia Contributo UE Nessun dato Indirizzo Domaine de corbeville 91404 Orsay Mostra sulla mappa Costo totale Nessun dato THOMSON CSF SEMICONDUCTEURS SPECIFIQUES Francia Contributo UE Nessun dato Indirizzo 3300 rue jean-pierre timbaud 92402 Courbevoie Mostra sulla mappa Costo totale Nessun dato