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Materials for Robust Gallium Nitride

Materials for Robust Gallium Nitride

Objective

The MORGaN project addresses the need for a new materials for electronic devices and sensors that operate in extreme conditions, especially high temperature, high electric field and highly corrosive environment. It will take advantage of the excellent physical properties of diamond and gallium nitride heterostructures. The association of the two materials will give rise to the best materials and devices for ultimate performance in extreme environments. Both materials possess durability and robustness to high temperature, radiation and electric field. Diamond material exhibits the best mechanical robustness and thermal conductivity, while GaN presents also high electron mobility, giving high power handling and efficiency. III-N systems have other desirable properties for sensor applications in extreme environments. It is the only highly polar semiconductor matrix that has ceramic-like stability and can form heterostructures. It has the highest spontaneous polarisation with a Curie temperature above 1000°C for AlN: a lattice matched III-N heterostructure with a built-in polarisation discontinuity is expected to enable transistor action above 1000°C. The packaging and metallisation of an electronic device or sensor are important elements in extreme conditions. Metal contacts must be stable and the package must be thermally compatible with the device requirements and chemically stable. MORGaN proposes a novel technological solution to electron device and sensor modules. Advanced 3D ceramic packaging and new metallisation techniques based on the emerging technology of MN+1AXN alloys will also be explored. As such, the vision of MORGaN for materials for extreme conditions is holistic, involving 2 large industrial partners, 2 industrial labs, 6 SMEs and 13 public research partners. The project includes research, demonstration, management, training and dissemination activities.

Coordinator

III-V LAB

Address

1 Avenue Augustin Fresnel Campus Polytechnique
91767 Palaiseau Cedex

France

Activity type

Private for-profit entities (excluding Higher or Secondary Education Establishments)

EU Contribution

€ 1 695 396

Administrative Contact

Louise Pillon (Ms.)

Participants (23)

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AIXTRON SE

Germany

EU Contribution

€ 453 096

CESKE VYSOKE UCENI TECHNICKE V PRAZE

Czechia

EU Contribution

€ 91 873

ELEMENT SIX LIMITED

United Kingdom

EU Contribution

€ 326 575

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE

Switzerland

EU Contribution

€ 468 906

FCUBIC AB

Sweden

EU Contribution

€ 156 233

FOUNDATION FOR RESEARCH AND TECHNOLOGY HELLAS

Greece

EU Contribution

€ 523 731

GWENT ELECTRONIC MATERIALS LIMITED

United Kingdom

EU Contribution

€ 173 322

UNIVERSITY OF GLASGOW

United Kingdom

EU Contribution

€ 222 327

IMPACT COATINGS AB

Sweden

EU Contribution

€ 185 967

Institute of Electrical Engineering, Slovak Academy of Sciences

Slovakia

EU Contribution

€ 213 461

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

France

EU Contribution

€ 238 063

INSTYTUT TECHNOLOGII ELEKTRONOWEJ

Poland

EU Contribution

€ 222 049

RISE IVF AB

Sweden

EU Contribution

€ 786 120

UNIVERSITE JOSEPH FOURIER GRENOBLE 1

France

EU Contribution

€ 175 442

MAGYAR TUDOMANYOS AKADEMIA TERMESZETTUDOMANYI KUTATOKOZPONT

Hungary

EU Contribution

€ 391 578

MICROGAN GMBH

Germany

EU Contribution

€ 523 993

Gooch & Housego (Torquay) Limited

United Kingdom

EU Contribution

€ 224 705

SLOVENSKA TECHNICKA UNIVERZITA V BRATISLAVE

Slovakia

EU Contribution

€ 240 636

UNIVERSITAET ULM

Germany

EU Contribution

€ 587 909

TECHNISCHE UNIVERSITAET WIEN

Austria

EU Contribution

€ 312 067

UNIVERSITY OF BATH

United Kingdom

EU Contribution

€ 776 887

VIVID COMPONENTS LTD

United Kingdom

EU Contribution

€ 209 664

THALES SA

France

Project information

Grant agreement ID: 214610

Status

Closed project

  • Start date

    1 November 2008

  • End date

    31 October 2011

Funded under:

FP7-NMP

  • Overall budget:

    € 13 862 596,42

  • EU contribution

    € 9 200 000

Coordinated by:

III-V LAB

France

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