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Surface engineered InGaN heterostructures on N-polar and nonpolar GaN-substrates for green light emitters

Surface engineered InGaN heterostructures on N-polar and nonpolar GaN-substrates for green light emitters

Objective

The goal of this project is to develop the potential of molecular beam epitaxy on nearly dislocation free GaN single crystals for semiconductor lasers in the green spectral range (520-550nm). The active structure will consist of In-rich InGaN layers. Our goal is to push the internal quantum efficiencies of green emitting InGaN devices at 520 nm beyond 30% and to obtain stimulated emission beyond 500 nm. This will be done by (i) engineering the active structure of the device to reduce the effects of piezeolectric fields that reduce the efficiency of these devices (ii) exploring molecular beam epitaxy on non-polar, semi polar and N-polar surfaces to obtain maximum In incorporation and by (iii) improving the structural perfection of the active layers by applying surfactants. It must be understood though that there is no fully established know-how, in terms of growth, optical and structural properties of In-rich InGaN/GaN heterostructures Spinodal decomposition, In-segregation and misfit dislocation formation are still major issues. Structural degradation caused by the specific growth conditions necessary for high In-content layers dramatically reduces the internal quantum efficiency. Piezoelectric fields, due to the high strain of In-rich structures contribute to further reduction in efficiency of devices. Realisation of nonpolar or semipolar devices can reduce the piezoelectric fields. However, high levels of In incorporation, a prerequisite for green emitters, is a challenge that has not been solved till now. Our project combines molecular-beam epitaxy with unique dislocation free GaN substrates, advanced structural analysis and state of the art modelling and simulation to overcome these limitations. The project will take full advantage of the know-how acquired at TopGaN in the growth of UV lasers by MBE and the progress made in dislocation free substrates. This will enable growth to be performed on any defined surface orientation required.
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Coordinator

FORSCHUNGSVERBUND BERLIN EV

Address

Rudower Chaussee 17
12489 Berlin

Germany

Activity type

Higher or Secondary Education Establishments

EU Contribution

€ 435 487

Administrative Contact

Friederike Schmidt-Tremmel (Dr.)

Participants (2)

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TOP-GAN SP ZOO

Poland

EU Contribution

€ 308 415

MAX PLANCK INSTITUT FUR EISENFORSCHUNG GMBH

Germany

EU Contribution

€ 282 289

Project information

Grant agreement ID: 230765

Status

Closed project

  • Start date

    1 December 2009

  • End date

    30 November 2013

Funded under:

FP7-PEOPLE

  • Overall budget:

    € 1 026 191

  • EU contribution

    € 1 026 191

Coordinated by:

FORSCHUNGSVERBUND BERLIN EV

Germany