Cadmium Telluride (CdTe) is already established as a prominent conventional solar cell semiconductor material due to its energy gap 1.5 eV with an almost perfect match to the solar spectrum. The aim of this research is to study the use of nano-structured CdTe as the absorbing layer in PV solar cells, and to evaluate the performance and industrial potential of these cells for a spread of PV applications, from low cost to high efficiency thermo-sensitive platforms and devices. It would require an investigation of processes for inexpensive fabrication of large periodic arrays of semiconductor nanostructures that will allow for (a) controlled variations in the size and composition of the nanostructures, (b) encapsulation of the semiconductor nanostructures in a rugged host material, (c) flexibility to use a variety of substrate materials, and (d) compatibility with standard silicon fabrication techniques. Additionally, the same CdTe-based PV nano-structures could be used as efficient imaging flat-panel direct-conversion semiconductor detectors for applications in such diverse fields as nuclear medicine, homeland security, astrophysics, and environmental remediation.