Skip to main content

Steep subthreshold slope switches\nfor energy efficient electronics

Project description


Nanoelectronics Technology
European Union Research Initiative Aims to Increase 
Electronic Device Efficiency by 10x and Eliminate Power Consumption of Devices in Standby Mode
STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to-band tunnelling (tunnel FETs), with the aim of reducing the operation voltage of nanoelectronic circuits to sub-0.5V and their power consumption by one order of magnitude.STEEPER focuses on two technology tracks, united by same device principle, shared performance boosters, and compatibility with silicon CMOS. These are (i) Ultra-Thin-Body Silicon-On-Insulator technology for planar, tri-gate and nanowire tunnel FETs featuring ultra-low standby power and smartly exploiting additive boosters: high-k dielectrics, SiGe source, strain, and improved electrostatic design, and (ii) a III-V nanowire platform on silicon, as unique material to control staggered or broken bandgap boosters and devise a high performance (high-Ion, steep slope) implementation of tunnel FETs. Platform (i) will enable a hybrid platform combining high performance (HP) CMOS and low standby power (LSTP), low voltage tunnel FETs, supporting energy efficient hybrid CMOS/Tunnel-FET digital and analog/RF circuit design. In line with ITRS, STEEPER will evaluate in platform (ii) the physical and practical limits of boosting the performance of tunnel FETs with III-V nanowires on silicon, and resulting advantages for HP digital circuits.The development of the two technology platforms are interactive and collaborative in terms of performance boosters, and will benefit from simulation and modelling support by the academic partners, and from investigation of the potentially critical variability and sensitivity of tunnel FETs. Industrial benchmarking is proposed at device and circuit levels by the key involved industries, and the figures of merit of hybrid CMOS/tunnel FET digital and analog circuit design will be investigated.The project targets energy efficient nanoelectronic technology for high volume markets covering digital, analog/RF and mixed mode applications.

Call for proposal

FP7-ICT-2009-5
See other projects for this call

Coordinator Contact

Mihai Adrian IONESCU (Prof.)

Coordinator

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Address
Batiment Ce 3316 Station 1
1015 Lausanne
Switzerland
Activity type
Higher or Secondary Education Establishments
EU contribution
€ 484 540
Administrative Contact
Mihai Adrian Ionescu (Prof.)

Participants (13)

SCIPROM SARL
Switzerland
EU contribution
€ 138 728
Address
Rue Du Centre 70
1025 Saint Sulpice
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative Contact
Peter Ulrich (Dr.)
IBM RESEARCH GMBH
Switzerland
EU contribution
€ 745 350
Address
Saeumerstrasse 4
8803 Rueschlikon
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative Contact
Catherine Trachsel (Ms.)
RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN
Germany
EU contribution
€ 165 862
Address
Templergraben 55
52062 Aachen
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Joachim Knoch (Prof.)
TECHNISCHE UNIVERSITAT DORTMUND

Participation ended

Germany
EU contribution
€ 71 312
Address
August Schmidt Strasse 4
44227 Dortmund
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Joachim Knoch (Prof.)
FORSCHUNGSZENTRUM JULICH GMBH
Germany
EU contribution
€ 493 229
Address
Wilhelm Johnen Strasse
52428 Julich
Activity type
Research Organisations
Administrative Contact
Volker Marx (Mr.)
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG
Germany
EU contribution
€ 265 494
Address
Wilschdorfer Landstrasse 101
01109 Dresden
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative Contact
Juergen Faul (Dr.)
INTEL DEUTSCHLAND GMBH
Germany
EU contribution
€ 239 345
Address
Am Campeon 10-12
85579 Neubiberg
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative Contact
Stefanie Schroeckeneder (Mrs.)
INFINEON TECHNOLOGIES AG

Participation ended

Germany
EU contribution
€ 37 108
Address
Am Campeon 1-15
85579 Neubiberg
Activity type
Private for-profit entities (excluding Higher or Secondary Education Establishments)
Administrative Contact
Bernhard Scholz (Mr.)
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France
EU contribution
€ 914 551
Address
Rue Leblanc 25
75015 Paris 15
Activity type
Research Organisations
Administrative Contact
Marie-Laure Page (Ms.)
CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Italy
EU contribution
€ 6 024
Address
Via Toffano 2
40125 Bologna
Activity type
Research Organisations
Administrative Contact
LUCA SELMI (Prof.)
ALMA MATER STUDIORUM - UNIVERSITA DI BOLOGNA
Italy
EU contribution
€ 244 386
Address
Via Zamboni 33
40126 Bologna
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Giorgio Baccarani (Prof.)
UNIVERSITA DI PISA
Italy
EU contribution
€ 49 684
Address
Lungarno Pacinotti 43/44
56126 Pisa
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Gianluca Fiori (Prof.)
UNIVERSITA DEGLI STUDI DI UDINE
Italy
EU contribution
€ 244 386
Address
Via Palladio 8
33100 Udine
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Luca Selmi (Prof.)