Servicio de Información Comunitario sobre Investigación y Desarrollo - CORDIS

Steep subthreshold slope switches\nfor energy efficient electronics

Desde 2010-06-01 hasta 2013-11-30, proyecto cerrado | STEEPER Sitio web

Detalles del proyecto

Coste total:

EUR 6 111 900

Aportación de la UE:

EUR 4 099 999

Coordinado en:

Switzerland

Convocatoria de propuestas:

FP7-ICT-2009-5See other projects for this call

Régimen de financiación:

CP - Collaborative project (generic)

Description

European Union Research Initiative Aims to Increase 
Electronic Device Efficiency by 10x and Eliminate Power Consumption of Devices in Standby Mode
STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to-band tunnelling (tunnel FETs), with the aim of reducing the operation voltage of nanoelectronic circuits to sub-0.5V, and their power consumption by one order of magnitude.STEEPER focuses on two technology tracks, united by same device principle, shared performance boosters, and compatibility with silicon CMOS. These are (i) Ultra-Thin-Body Silicon-On-Insulator technology for planar, tri-gate and nanowire tunnel FETs featuring ultra-low standby power and smartly exploiting additive boosters: high-k dielectrics, SiGe source, strain, and improved electrostatic design, and (ii) a III-V nanowire platform on silicon, as unique material to control staggered or broken bandgap boosters and devise a high performance (high-Ion, steep slope) implementation of tunnel FETs. Platform (i) will enable a hybrid platform combining high performance (HP) CMOS and low standby power (LSTP), low voltage tunnel FETs, supporting energy efficient hybrid CMOS/Tunnel-FET digital and analog/RF circuit design. In line with ITRS, STEEPER will evaluate in platform (ii) the physical and practical limits of boosting the performance of tunnel FETs with III-V nanowires on silicon, and resulting advantages for HP digital circuits.The development of the two technology platforms are interactive and collaborative in terms of performance boosters, and will benefit from simulation and modelling support by the academic partners, and from investigation of the potentially critical variability and sensitivity of tunnel FETs. Industrial benchmarking is proposed at device and circuit levels by the key involved industries, and the figures of merit of hybrid CMOS/tunnel FET digital and analog circuit design will be investigated.The project targets energy efficient nanoelectronic technology for high volume markets covering digital, analog/RF and mixed mode applications.

Objetivo

STEEPER addresses the development of Beyond CMOS energy-efficient steep subthreshold slope transistors based on quantum mechanical band-to-band tunnelling (tunnel FETs), with the aim of reducing the operation voltage of nanoelectronic circuits to sub-0.5V, and their power consumption by one order of magnitude.STEEPER focuses on two technology tracks, united by same device principle, shared performance boosters, and compatibility with silicon CMOS. These are (i) Ultra-Thin-Body Silicon-On-Insulator technology for planar, tri-gate and nanowire tunnel FETs featuring ultra-low standby power and smartly exploiting additive boosters: high-k dielectrics, SiGe source, strain, and improved electrostatic design, and (ii) a III-V nanowire platform on silicon, as unique material to control staggered or broken bandgap boosters and devise a high performance (high-Ion, steep slope) implementation of tunnel FETs. Platform (i) will enable a hybrid platform combining high performance (HP) CMOS and low standby power (LSTP), low voltage tunnel FETs, supporting energy efficient hybrid CMOS/Tunnel-FET digital and analog/RF circuit design. In line with ITRS, STEEPER will evaluate in platform (ii) the physical and practical limits of boosting the performance of tunnel FETs with III-V nanowires on silicon, and resulting advantages for HP digital circuits.The development of the two technology platforms are interactive and collaborative in terms of performance boosters, and will benefit from simulation and modelling support by the academic partners, and from investigation of the potentially critical variability and sensitivity of tunnel FETs. Industrial benchmarking is proposed at device and circuit levels by the key involved industries, and the figures of merit of hybrid CMOS/tunnel FET digital and analog circuit design will be investigated.The project targets energy efficient nanoelectronic technology for high volume markets covering digital, analog/RF and mixed mode applications.

Contacto del coordinador

Mihai Adrian IONESCU
Tel.: +41 21 693 3978
Fax: +41 21 693 3640
Correo electrónico

Coordinador

ECOLE POLYTECHNIQUE FEDERALE DE LAUSANNE
Switzerland

Aportación de la UE: EUR 484 540


BATIMENT CE 3316 STATION 1
1015 LAUSANNE
Switzerland
Activity type: Higher or Secondary Education Establishments
Contacto administrativo: Mihai Adrian Ionescu
Tel.: +41 21 693 3978
Fax: +41 21 693 3640
Correo electrónico

Participantes

SCIPROM Sàrl
Switzerland

Aportación de la UE: EUR 138 728


RUE DU CENTRE 70
1025 SAINT SULPICE
Switzerland
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contacto administrativo: Peter Ulrich
Tel.: +41 21 6940414
Fax: +41 21 6940419
Correo electrónico
IBM RESEARCH GMBH
Switzerland

Aportación de la UE: EUR 745 350


SAEUMERSTRASSE 4
8803 RUESCHLIKON
Switzerland
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contacto administrativo: Catherine Trachsel
Tel.: +41 44 724 8289
Fax: +41 44 724 8578
Correo electrónico
RHEINISCH-WESTFAELISCHE TECHNISCHE HOCHSCHULE AACHEN
Germany

Aportación de la UE: EUR 165 862


TEMPLERGRABEN 55
52062 AACHEN
Germany
Activity type: Higher or Secondary Education Establishments
Contacto administrativo: Joachim Knoch
Tel.: +49 241 8027891
Correo electrónico
TECHNISCHE UNIVERSITAT DORTMUND
La participación finalizó
Germany

Aportación de la UE: EUR 71 312


AUGUST SCHMIDT STRASSE 4
44227 DORTMUND
Germany
Activity type: Higher or Secondary Education Establishments
Contacto administrativo: Joachim Knoch
Tel.: +49 231 7553966
Fax: +49 231 7554450
Correo electrónico
FORSCHUNGSZENTRUM JULICH GMBH
Germany

Aportación de la UE: EUR 493 229


WILHELM JOHNEN STRASSE
52428 JULICH
Germany
Activity type: Research Organisations
Contacto administrativo: Volker Marx
Tel.: +49 2461 615831
Fax: +49 2461 612118
Correo electrónico
GLOBALFOUNDRIES Dresden Module One LLC & Co. KG
Germany

Aportación de la UE: EUR 265 494


Wilschdorfer Landstrasse 101
01109 Dresden
Germany
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contacto administrativo: Juergen Faul
Tel.: +49 351 277 4531
Fax: +49 351 277 9 4531
Correo electrónico
INTEL DEUTSCHLAND GMBH
Germany

Aportación de la UE: EUR 239 345


AM CAMPEON 10-12
85579 NEUBIBERG
Germany
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contacto administrativo: Stefanie Schroeckeneder
Tel.: +49 89 998853 28357
Correo electrónico
INFINEON TECHNOLOGIES AG
La participación finalizó
Germany

Aportación de la UE: EUR 37 108


AM CAMPEON 1-15
85579 NEUBIBERG
Germany
Activity type: Private for-profit entities (excluding Higher or Secondary Education Establishments)
Contacto administrativo: Bernhard Scholz
Tel.: +49 89 234 22339
Fax: +49 89 234 9550395
Correo electrónico
COMMISSARIAT A L ENERGIE ATOMIQUE ET AUX ENERGIES ALTERNATIVES
France

Aportación de la UE: EUR 914 551


RUE LEBLANC 25
75015 PARIS 15
France
Activity type: Research Organisations
Contacto administrativo: Marie-Laure Page
Tel.: +33 4 38782796
Fax: +33 4 38785183
Correo electrónico
CONSORZIO NAZIONALE INTERUNIVERSITARIO PER LA NANOELETTRONICA
Italy

Aportación de la UE: EUR 6 024


VIA TOFFANO 2
40125 BOLOGNA
Italy
Activity type: Research Organisations
Contacto administrativo: LUCA SELMI
Tel.: +39 0432 558293
Fax: +39 0432 558251
Correo electrónico
ALMA MATER STUDIORUM - UNIVERSITA DI BOLOGNA
Italy

Aportación de la UE: EUR 244 386


VIA ZAMBONI 33
40126 BOLOGNA
Italy
Activity type: Higher or Secondary Education Establishments
Contacto administrativo: Giorgio Baccarani
Tel.: +39 051 2093012
Correo electrónico
UNIVERSITA DI PISA
Italy

Aportación de la UE: EUR 49 684


LUNGARNO PACINOTTI 43/44
56126 PISA
Italy
Activity type: Higher or Secondary Education Establishments
Contacto administrativo: Gianluca Fiori
Tel.: +39 050 2217596
Correo electrónico
UNIVERSITA DEGLI STUDI DI UDINE
Italy

Aportación de la UE: EUR 244 386


VIA PALLADIO 8
33100 UDINE
Italy
Activity type: Higher or Secondary Education Establishments
Contacto administrativo: Luca Selmi
Tel.: +39 0432 558293
Fax: +39 0432 558 251
Correo electrónico
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