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Advanced TEchnology MOdelling for eXtra-functionality devices

Advanced TEchnology MOdelling for eXtra-functionality devices

Objective

Extends the capabilities of TCAD to the modelling of leakage currents and technologies for low-leakage ultra-shallow junctions.

Within previous European projects process simulation has been brought to a state which allows in industrial environments a sufficiently accurate simulation of doping profiles in advanced CMOS technologies. Important electrical characteristics of core CMOS devices can now be predicted from scratch or with a minimum calibration effort. However, concepts towards low-power electronics, smart power applications, CMOS image sensors, and CMOS derivatives providing extra functionalities are still not sufficiently supported by TCAD. This concerns especially the prediction of leakage currents in such or parasitic devices caused by electrically active defects that remain after processing, and alternative doping techniques like plasma immersion ion implantation, low-temperature implantation, diversified cocktail implants and laser annealing which are considered for low-leakage ultra shallow junctions. The lack of suitable models that can be used in the early stages of industrial research and development inhibits the necessary cost reduction in the development of devices for which Europe is still at the forefront. The Atemox project will develop the full set of missing models and implement and include them into the Sentaurus TCAD platform of Synopsys so that they are of immediate value to the European semiconductor industry. The integrated models will finally be evaluated by STMicroelectronics with respect to industrial needs. To reach these ambitious goals, European companies active in complementary fields of competence  and leading European research institutes have formed a consortium that is well prepared to expertly cover all fields from experiment via characterization and modelling to simulation.

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Coordinator

FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Address

Hansastrasse 27c
80686 Munchen

Germany

Activity type

Research Organisations

EU Contribution

€ 649 811

Administrative Contact

Andrea Zeumann (Ms.)

Participants (13)

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EIDGENOESSISCHE TECHNISCHE HOCHSCHULE ZUERICH

Switzerland

EU Contribution

€ 243 780

SYNOPSYS SWITZERLAND LLC

Switzerland

EU Contribution

€ 165 570

SYNOPSYS GMBH

Germany

EU Contribution

€ 126 250

STMICROELECTRONICS SA

France

EU Contribution

€ 116 012

PROBION ANALYSIS SARL

France

EU Contribution

€ 161 055

Excico France

France

EU Contribution

€ 178 624

STMICROELECTRONICS CROLLES 2 SAS

France

EU Contribution

€ 111 979

ION BEAM SERVICES

France

EU Contribution

€ 150 105

CENTRE NATIONAL DE LA RECHERCHE SCIENTIFIQUE CNRS

France

EU Contribution

€ 391 416

SEMILAB FELVEZETO FIZIKAI LABORATORIUM RESZVENYTARSASAG

Hungary

EU Contribution

€ 51 300

CONSIGLIO NAZIONALE DELLE RICERCHE

Italy

EU Contribution

€ 174 973

UNIVERSITY OF NEWCASTLE UPON TYNE

United Kingdom

EU Contribution

€ 441 138

UNIVERSITE PAUL SABATIER TOULOUSE III

France

EU Contribution

€ 62 022

Project information

Grant agreement ID: 258547

Status

Closed project

  • Start date

    1 July 2010

  • End date

    30 November 2013

Funded under:

FP7-ICT

  • Overall budget:

    € 4 330 254

  • EU contribution

    € 3 024 035

Coordinated by:

FRAUNHOFER GESELLSCHAFT ZUR FOERDERUNG DER ANGEWANDTEN FORSCHUNG E.V.

Germany