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Dopant-surface interactions in silicon nanoclusters

Objective

Silicon nanostructured films are promising materials for photovoltaic applications. By exploring confinement effects and changing the surface morphology, it is possible to vary the optical absorption threshold energy without the resource to different semiconductors. However, to exploit the potential of this class of materials, it is necessary to achieve a detailed understanding and control of n- and p-type doping. Here, a study of the interaction of dopant atoms with the surface of stand-alone silicon clusters is proposed. The investigation will be carried out using density functional theory electronic structure calculations, and observable properties will be applied to the interpretation of experimental results. The aim is to find the combination of dopant species, surface passivation and post-processing treatments that leads to optimum n- and p-type doping efficiency.

Call for proposal

FP7-PEOPLE-2009-IEF
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Coordinator

UNIVERSIDADE DE AVEIRO
EU contribution
€ 148 283,60
Address
CAMPUS UNIVERSITÁRIO DE SANTIAGO
3810-193 Aveiro
Portugal

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Region
Continente Centro (PT) Região de Aveiro
Activity type
Higher or Secondary Education Establishments
Administrative Contact
Fernando Ferreira Batista (Dr.)
Links
Total cost
No data