Semiconductor quantum dots have been at the centre of a significant research effort in the recent years. They are viewed as one of the important tools to address quantum information challenges, and overcome technological limitations in terms of device performances. Nevertheless, present technologies are far from having solved all the technical challenges involved. The aim of this proposal is to develop new epitaxial, ordered, position controlled quantum InGaAsN dot structures by metalorganic vapour phase epitaxy (MOVPE) at Tyndall National Institute, a leading institute in the development of new growth capabilities. The growth will be conducted on lithographically prepatterned substrates (GaAs) and will help overcoming many of the current oddities and difficulties, while allowing to obtain semiconductor quantum dots suitable for telecom applications. The project will improve the capability of controlling QD electronic states and will provide the scientific community with better tools to deal with quantum information tasks, e.g. strain free pseudomorphic dots and long wavelength capability. The activities at Tyndall will be complimented with photophysical studies done in collaboration with world-class spectroscopy groups in Italy and the Netherlands.