CORDIS
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AlGaN and InAlN based microwave components

Project information

Grant agreement ID: 242394

Status

Closed project

  • Start date

    1 November 2010

  • End date

    30 April 2014

Funded under:

FP7-SPACE

  • Overall budget:

    € 3 368 361,60

  • EU contribution

    € 1 953 471,40

Coordinated by:

UNITED MONOLITHIC SEMICONDUCTORS SAS

France

Objective

This proposal is focused on the development of a new generation of wide band gap (WBG) GaN technology and devices for which strong impacts in term of performances, reliability and robustness are expected.
AL-IN-WON will explore two main disrupting routes:
- Next generation of WBG device based on new epi material (InAlN/GaN) for strong improvement in term of performances and reliability.
- High efficiency / High Power generation in Ku / Ka bands
It proposes to evaluate in 2 phases next generation of WBG material up to Ka Band.

The InAlN/GaN heterostructure offers the following advantages:
 As InAlN/GaN is lattice matched, it offer the possibility to growth very thin layer in the range of 10nm or below WHICH IS THE MOST RELEVANT to overcome short channel effect AND GO TOWARDS HIGH frequency range up to millimeter wave range.
 In0.18 Al0.82N /GaN is a new heterostructure able to give twice the drain current available from a more conventional AlGaN/GaN heterostructure. Breakdown voltage is comparable for the two heterostructures.
 In0.18 Al0.82N is latticed matched to GaN and higher reliability is therefore expected compared to AlGaN/GaN.
 Passivation is currently a major limitation to device operation. InAlN/GaN MOSHEMT are very promising with strong current drain improvement compared to HEMT (UltraGaN).
We plan to evaluate CW Ku and Ka Band MMIC High Power Amplifiers (HPA) and Low Noise Amplifiers (LNA). Demonstrators in Ka band will be designed based on devices coming from the run 2.

The final objective being the evaluation of InAlN/GaN compared to more conventional AlGaN/GaN very high power HEMT technology with very high breakdown voltage, high current and compliant with high power density. Regarding space application for which reliability and robustness are of major concerns, we expect to demonstrate the major breakthrough offered by GaN technology, and especially InAlN if successful.

Coordinator

UNITED MONOLITHIC SEMICONDUCTORS SAS

Address

Av Du Quebec 10 Batiment Charmille Parc Silic De Villebon Courtaboeuf
91140 Villebon Sur Yvette

France

Activity type

Private for-profit entities (excluding Higher or Secondary Education Establishments)

EU Contribution

€ 365 500

Administrative Contact

Didier Baglieri (Mr.)

Participants (6)

UNITED MONOLITHIC SEMICONDUCTORS GMBH

Germany

EU Contribution

€ 272 940,80

THALES ALENIA SPACE FRANCE SAS

France

EU Contribution

€ 175 798

UNIVERSITA DEGLI STUDI DI PADOVA

Italy

EU Contribution

€ 301 107,60

UNIVERSITE DE LIMOGES

France

EU Contribution

€ 187 229

MEC - MICROWAVE ELECTRONICS FOR COMMUNICATIONS SRL

Italy

EU Contribution

€ 200 134

III-V LAB

France

EU Contribution

€ 450 762

Project information

Grant agreement ID: 242394

Status

Closed project

  • Start date

    1 November 2010

  • End date

    30 April 2014

Funded under:

FP7-SPACE

  • Overall budget:

    € 3 368 361,60

  • EU contribution

    € 1 953 471,40

Coordinated by:

UNITED MONOLITHIC SEMICONDUCTORS SAS

France

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