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FACIT Report Summary

Project ID: 628523
Funded under: FP7-PEOPLE
Country: Switzerland

Final Report Summary - FACIT (Fast Anneal of Compound semiconductors for Integration of new Technologies)

The International Technology Roadmap for Semiconductors foresees that replacing silicon with high-mobility channels such as Ge and InGaAs will be the next major materials revolution. Consequently, SiGe and InGaAs active areas will be co-integrated at a nanometer lateral scale on the same large size Si wafer (350- 400 mm). SiGe and InGaAs are both very different from Si, in particular with respect to thermal treatments. Co-processing of SiGe pFET and InGaAs nFET is therefore extremely challenging. Device processing on InGaAs nFET should not exceed the allowed thermal budget that SiGe can withstand or vice-versa. Ultra fast annealing could be a key technology to enable the co-integration of Ge and InGaAs. The objective of the FACIT project is to explore fast (ms) anneal of high-mobility channels as a generic vehicle to reduce the thermal budget of critical modules. It focus in particular on InGaAs, as it is the less mature technology with respect to SiGe-based devices.
The work summarized in the final report covers the progress made in the project, focusing on the development of ms annealing capability at IBM, the development of the high-k/In0.53Ga0.47As gate stack. It highlights the possibility to obtain high-quality gate stack on InGaAs, in particular using Al2O3/HfO2 bilayers. Moreover, it proves that the use of ms anneal can massively reduce the interface state density, and is equivalent to a standard anneal in Argon/Hydrogen ambiant, yet using a substantially lower thermal budget

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