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LAPLADIS Report Summary

Project ID: G5RD-CT-2001-03004
Funded under: FP5-GROWTH
Country: Italy

Etching process with SiO2/Si selectivity for large area treatments

Development of recipes for high selective etching: pressure, gas mixture, power, bias voltage.

The Selectivity optimum with a gas mixture ratio C2H4/(CF4+C2H4) comprised between of 30% and 40%. with a RF power of 2000W and a pressure of 4 mTorr.

Care must be taken on the cleanliness of the plasma chamber to guarantee the reproducibility of the results.

Reported by

EC Joint Research Center
Via E. Fermi 1
21020 Ispra (VA)
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