Forschungs- & Entwicklungsinformationsdienst der Gemeinschaft - CORDIS

Free-standing GaN

Thick GaN layer were grown by HVPE on ELO quality GaN/sapphire. Afterwards the starting sapphire was separated either by laser lift off or by a CNRS proprietary technology. These free- standing GaN exhibit TDs in the mid 106cm{-2} and therefore are suitable for the growth of laser diode structures.

The process still needs to improved (reduction of the pits density, of the bow, of the warp, polishing).

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