Servicio de Información Comunitario sobre Investigación y Desarrollo - CORDIS


EURONIM Informe resumido

Project ID: G5RD-CT-2001-00470
Financiado con arreglo a: FP5-GROWTH
País: France

Free-standing GaN

Thick GaN layer were grown by HVPE on ELO quality GaN/sapphire. Afterwards the starting sapphire was separated either by laser lift off or by a CNRS proprietary technology. These free- standing GaN exhibit TDs in the mid 106cm{-2} and therefore are suitable for the growth of laser diode structures.

The process still needs to improved (reduction of the pits density, of the bow, of the warp, polishing).

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