Service Communautaire d'Information sur la Recherche et le Développement - CORDIS

Free-standing GaN

Thick GaN layer were grown by HVPE on ELO quality GaN/sapphire. Afterwards the starting sapphire was separated either by laser lift off or by a CNRS proprietary technology. These free- standing GaN exhibit TDs in the mid 106cm{-2} and therefore are suitable for the growth of laser diode structures.

The process still needs to improved (reduction of the pits density, of the bow, of the warp, polishing).

Informations connexes

Reported by

Lumilog
2720, chemin de Saint Bernard, Les Moulins I
06220 Vallauris
France