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Project ID: G5RD-CT-2001-00470
Finanziato nell'ambito di: FP5-GROWTH
Paese: France

ELO GaN/sapphire template, TDs between stripes ~mid106cm{-2}

ELO GaN/sapphire pseudosubstrates with TDs density between stripes in the mid 10-6cm{-2} are currently available. These are produced using the proprietary 2 step technology. These ELO pseudosubstrates are mainly used for the laser diodes fabrication.

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