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EURONIM Résumé de rapport

Project ID: G5RD-CT-2001-00470
Financé au titre de: FP5-GROWTH
Pays: France

Standard GaN/sapphire template (NID, n-type and semi-insulating), TDs~mid108cm{-2}

GaN/sapphire templates with TDs density in the mid 108cm{-2} are currently available. These are produce using the proprietary Si/N treatment of the sapphire substrate prior to the depososition of the low temperature buffer layer. These are pseudosubstrate used for the growth of nitride based device structure, mainly in MBE where the current status of the technology does not allow fabricating low dislocation density templates.

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