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FP5

NICE Report Summary

Project ID: IST-1999-29111
Funded under: FP5-IST
Country: United States

Fullerene MESFET device

Controlled fabrication and in-situ electrical characterization of a three-terminal device with fullerene and metal materials has been achieved. The materials used in this first device are Cu and La@C82. Electrical characterization shows that the device does not work as a FET, i.e. the source-drain conductance cannot be controlled with the applied gate voltage. From current-voltage characteristics it is concluded that the device is space-charge limited.

More information on the Nice project can be found at: http://www.tyndall.ie/projects/nice/

Reported by

IBM Research
30, Sawmill River Road
10352 Hawthorne, NY
United States
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