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Fullerene MESFET device

Controlled fabrication and in-situ electrical characterization of a three-terminal device with fullerene and metal materials has been achieved. The materials used in this first device are Cu and La@C82. Electrical characterization shows that the device does not work as a FET, i.e. the source-drain conductance cannot be controlled with the applied gate voltage. From current-voltage characteristics it is concluded that the device is space-charge limited.

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IBM Research
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