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PMN-PT thick films on Si substrate

Two inks of (1-x)Pb(Mg1/3Nb2/3)-xPbTiO3 previously optimised for alumina substrate, have been used for deposition on silicon wafers.

Inks with sintering aids (Li2CO3) have been optimised for low-temperature processing (800-900°C) of relaxor-ferroelectric thick films by screen-printing (film thickness = 15 to 30µm) with different PT content (1-xPMN-xPT with x= 0.35, 0.4). They have been prepared from micro-powders synthesised by Ferroperm (for x= 0.4 and 0.3) and from nano-powders elaborated by Thales (for 0.35).

To extend the low temperature process developed for thick films on alumina substrate to silicon substrates, and to optimise the heating treatment, the bottom electrode quality needed first to be improved. To avoid the electrode cleaving, an adhesion layer (TiO2, IrO2) was added between the substrate and the electrode. This layer was also helpful to prevent the lead diffusion into the substrate. In addition, a lower heating rate was necessary for processing of films deposited on silicon wafers.

The dielectric properties of these films have been investigated and a maximum of relative permittivity for 0.65PMN-0.35PT thick films sintered at 890°C were 8200 and 6000 for films deposited respectively on alumina and silicon substrate.

Reported by

Ecole Polytechnique Fédérale de Lausanne
EPFL STI-IMX - Ecublens
1015 Lausanne
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