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Epitaxial growth by MBE of III/V heterostructures particularly GaSb/AlSb/InAs

MBE growth, including optimisation for lattice mismatched growth, optimised growth temperatures and beam equivalent pressures.

Enabling future projects using these materials.

High-speed applications such as fundamental physics including ballistic transport, as well as opto-electronic applications like lasers and detectors for 1,55µm.

Reported by

Technische Universitaet Darmstadt
Hochschulstrasse 4A
64289 DARMSTADT
Germany
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