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Interface optimisation between AlSb and InAs

Reducing interfaces roughness is essential to improve the device characteristic, especially for nanometer structures where quantum effects occur. Special attention has to be paid if both group III and group V elements have to be changed.

Enabling future projects using these materials

High-speed applications such as HEMTs and fundamental physics including ballistic and/or spin transport, as well as opto-electronic applications like lasers and detectors for 1,55µm.

Reported by

Technische Universitaet Darmstadt
Hochschulstrasse 4A
64289 DARMSTADT
Germany
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