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Characterization techniques for GaSb/AlSb/InAs structures

Structure characterization with TEM, XRD and time resolved RHEED, in connection with Hall measurements give the knowledge to improve the epitaxial growth. These techniques will be of use in future projects using these materials. They can also be used in semiconductor process control applications.

Reported by

Technische Universitaet Darmstadt
Hochschulstrasse 4A
64289 DARMSTADT
Germany
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