Wspólnotowy Serwis Informacyjny Badan i Rozwoju - CORDIS

i-FLASiC technology for the formation of thick, good quality 3C-SiC layers

The current technology of growing 3C-SiC films epitaxially on Si-substrates is based on CVD at 1350°C and MBE at lower 1100°C. The perfection of the deposited SiC layer depends on the perfection of the first SiC monolayer. Therefore, the aim is the formation of a good quality SiC layer (< 100 nm) on Si-bulk using flash lamp annealing. For this a thin stacking structure of SiC-cap/Si/SiC will be deposited on Si-bulk wafer.

By the following flash, the light energy absorption is carried out in the Si-interlayer and this Si-layer will be molten. The SiC in contact with the molten Si dissociated. Simultaneously, the SiC from the SiC-cap layer will be moved to the lower SiC layer. During the cooling down the SiC grows epitaxially. After that the SiC-cap and the Si-interlayer must be removed. This can be carried out by a technology consist of physical + chemical etching. The remaining thin SiC layer is the seed for the deposition of thick SiC by CVD

Powiązane informacje

Reported by

FZ Rossendorf
PO 510119
01314 Dresden
Germany
Śledź nas na: RSS Facebook Twitter YouTube Zarządzany przez Urząd Publikacji UE W górę