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Vertical growth of individual nanotubes

We have developed wafer scale compatible carbon nanotube growth and processing techniques. These, for the first time, allow for the highly selective, clean and preferential growth of individual carbon nanotubes at pre-determined locations on a substrate. These nanotubes exhibit extremely high uniformity, typically 4% deviation in diameter and 6% deviation in height. Such structures are very useful as high performance electron sources, and thus can be applied in electron microscopy, lithography, holography and field emission displays, as well as the microwave amplifier application demonstrated in CANVAD.

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Dept of Engineering, University of Cambridge
Trumpington Street
CB2 1PZ Cambridge
United Kingdom
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