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Growth of GaN/AlGaN wafers for high electron mobility transistor (HEMT) by metaloorganic vapor phase epitaxy (MOVPE)

At UNIPRESS, Intsytut Wysokich Cisnien, two approaches to a design of epitaxial structures forming a base for high power, high frequency GaN/AlGaN transistors have been employed. First one utilizes metaloorganic vapor phase epitaxy (MOVPE) and GaN substrates grown by hydride vapor phase epitaxy (HVPE). This approach makes possible to produce wafers of reproducible physical properties (carrier concentration and electron mobility) suitable for fabrication of high performance high electron mobility transistors (HEMTs). A proper choice of the growth parameters, content of

Al in AlGaN barriers, thickness of barriers etc. enabled us to tune and optimise parameters of the grown epi-structures.

These structures were sent to ACREO for processing them as transistors, which show parameters comparable with devices fabricated by leading Japanes/Korean and US institutions.

The second approach consists of employing molecular beam epitaxy (MBE) growth technique for preparation of GaN/AlGaN heterostructures. Here bulk GaN crystals (doped with Mg) are used as substrates. It leads to a reduction in dislocation density (charged scattering centers) by few orders of magnitude in comparison with structures grown on SiC or sapphire (two to three orders of magnitude with respect to structures grown on HVPE-GaN. Within the second approach record mobility structures were achieved. They are highly suitable for basic research e.g., studies of new effects in
Quantum Hall Effect regime.

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Reported by

UNIPRESS, Instytut Wysokich Cisnien, Polskiej Akademii Nauk,
Ul. Sokolowska, 29
01-142 Warszawa
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