Forschungs- & Entwicklungsinformationsdienst der Gemeinschaft - CORDIS

Manufacturability

The manufacturability of the Si/SiGe ITD has been studied intensively. For the diodes with 5um2 device area the standard deviation of the peak current was about 16 %. The homogeneity of the peak voltage depends on the homogeneity of the epitaxial growth. In this case even a one-nanometer difference in the layer thickness plays a critical role. For the presented structure a standard deviation of the peak voltage was about 15%. For the PVCR a standard deviation of 4% and 8% was obtained. The ITD fulfils all requirements except the reproducibility of the peak current density.

Reported by

Universität Duisburg-Essen
Lotharstr. 55
47057 Duisburg
Germany
See on map
Folgen Sie uns auf: RSS Facebook Twitter YouTube Verwaltet vom Amt für Veröffentlichungen der EU Nach oben