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The manufacturability of the Si/SiGe ITD has been studied intensively. For the diodes with 5um2 device area the standard deviation of the peak current was about 16 %. The homogeneity of the peak voltage depends on the homogeneity of the epitaxial growth. In this case even a one-nanometer difference in the layer thickness plays a critical role. For the presented structure a standard deviation of the peak voltage was about 15%. For the PVCR a standard deviation of 4% and 8% was obtained. The ITD fulfils all requirements except the reproducibility of the peak current density.

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Universität Duisburg-Essen
Lotharstr. 55
47057 Duisburg
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