Service Communautaire d'Information sur la Recherche et le Développement - CORDIS

Quasi-persistent (1ms) spectral hole burning in quantum dot ensembles at low temperature

Nature of the result:
Spectral hole burning as a tool to circumvent inhomogeneous broadening in SAQD ensembles is demonstrated. Resonant optical excitation is used to selectively saturate the absorption of SAQDs and allows addressing SAQDs with identical ground state transition energies. This high-resolution saturation spectroscopy experiment enables to investigate e.g. the binding energy of charged trion complexes as well as the temperature dependence of the coupling to acoustic phonons. In addition, persistent spectral hole burning presents a basis for future wavelength-selective memory devices. The result suggests that more than 103 parallel bits in just one spatial data unit are addressable in future SAQD memory structures via wavelength-domain multiplexing.

Potential applications of the result:
The result can be used for further investigations of memory devices based on SAQDs. Moreover, the understanding of optical, phononic and exitonic properties of semiconductor nanostructures is largely enhanced, and therefore the result has also a general applicability.

End-users of the result:
The end users of the result are all those involved in the basic research area and also in the development of new semiconductor nanostruture devices, especially in the area of future memory device development. This includes members of the project consortium, the wider scientific community and industry.

Main innovative features/benefits:
The result represents the first spectral hole burning experiment at low temperatures with a storage time of 1 ms with high spectral resolution below 200µeV. This encouraging values present a basis for further research on spectral hole burning and for further investigations of SAQDs for memory devices.

Analysis of market or application sectors:
The result is in principle a more scientific one, so a detailed analysis is not applicable. In the long term the result will be useful for the development of novel semiconductor memory devices.

Potential barriers:
There are no barriers to the use of this result.

Reported by

Technische Universität Berlin (TU Berlin)
Hardenbergstr. 36
10623 Berlin
See on map