Wspólnotowy Serwis Informacyjny Badan i Rozwoju - CORDIS


TUF Streszczenie raportu

Project ID: G1RD-CT-2002-00741
Źródło dofinansowania: FP5-GROWTH
Kraj: United Kingdom

High Q, non tantalum, dielectric resonator materials

Compositions, non tantalum containing have been prepared. High Q properties similar to the system BZT have been measured. High Q, commercial dielectrics were originally built around the material system Ba (Zn, Ta) O3. When the TUF project was instigated the price of Ta2O5 was very high and impeding development of ceramic resonator components. The design of new, high Q materials, which did not require Ta2O5 was seen as a key feature.

The system developed under TUF, is based upon Ba (Zn, Co) NbO3. Substitution of Nb2O5 for Ta2O5 allows for a high Q, non tantalum conating dielectric. Doping the host BZN material with Co was necessary for tuning the temperature coefficient of resonant frequency (TCf). The control of TCf is one of the three key parameters for commercial realisation of dielectric materials.

Materials have been realised which conform to the original TUF specifications. Exploitation applications include:
- Manufacture of high Q, non tantalum dielectric resonator components.

- Targets for PLD, CVD sputtering.

- Compositions suitable for microwave chip capacitors.

Reported by

Filtronic Comtek, Ceramics Division
Enterprise Drive, Station Road
WV10 7DB Wolverhampton
United Kingdom
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