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Monolithic integrated smart accelerometers

Processes for the deposition and wet etching of various oxides as the sacrificial layer and for deposition and dry etching of polysilicon from 1 micron up to 10 micron thickness have been developed. Relevant parameters for accelerometer designs have been determined with specially designed test structures and equipment. Two different process flows for the integration of the sensors into a bipolar complementary metal oxide semiconductor (BICMOS) process have been developed, 24 different capacitive sensors for x, y and z axis measurement without on-chip electronics were fabricated with subsets of the integrated process flows. Different approaches for sensor signal detection and force feedback have been investigated in detail. Various single chip three-axis accelerometers with on-chip electronics were designed and fabricated with the developed process flows. Application specific tests were performed at SEAT.

Reported by

Fraunhofer ISIT
Fraunhoferstrasse 1
25524 Itzehoe
Germany
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