Hot cluster for integrated vapour phases cleaning and processing of dielectrics and insitu doped polysilicon

Ziel

- To establish sequential processes including rapid thermal clean (RTC), DRAM or EEPROM stack (Rapid Thermal Oxidation/Nitration: RTO/N) and rapid CVD of doped poly or nitride (RTCVD).

- To examine technical processes, equipment economics (CoO) and reliability for the hot processing cluster-tool.

- To compare technological performance and economics of the cluster tool with standard batch processing.

The performance of a four port hot cluster delivered by ASMI (platform and CVD modules) and by AST (RTP modules) will be assessed at SIEMENS in Munich. The final goal is to demonstrate technological superiority of clustered single wafer processing of very thin films over batch processes. This should lead to competitive cost of ownership figures even with lower throughput for single wafer processing.

Wissenschaftliches Gebiet

Programm/Programme

FP4-ESPRIT 4 - Specific research and technological development programme in the field of information technologies, 1994-1998

Thema/Themen

2.9 - Building blocks, methods & tools for semiconductor app&techs

Aufforderung zur Vorschlagseinreichung

Data not available

Finanzierungsplan

ACM - Preparatory, accompanying and support measures

Koordinator

Siemens Ag, Semiconductor Group

EU-Beitrag

Keine Daten

Adresse

Balanstrasse 73
81541 Muenchen
Deutschland

Gesamtkosten